IRFSL4310
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFSL4310
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 300
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 130
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 170
nC
trⓘ - Rise Time: 110
nS
Cossⓘ -
Output Capacitance: 540
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007
Ohm
Package:
TO262
IRFSL4310
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFSL4310
Datasheet (PDF)
..1. Size:376K international rectifier
irfb4310pbf irfs4310pbf irfsl4310pbf.pdf 
PD - 14275DIRFB4310PbFIRFS4310PbFIRFSL4310PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switchingl Hard Switched and High Frequency Circuits RDS(on) typ. 5.6mG max. 7.0mID 130ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized
..2. Size:376K infineon
irfb4310pbf irfs4310pbf irfsl4310pbf.pdf
PD - 14275DIRFB4310PbFIRFS4310PbFIRFSL4310PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switchingl Hard Switched and High Frequency Circuits RDS(on) typ. 5.6mG max. 7.0mID 130ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized
..3. Size:286K inchange semiconductor
irfsl4310 .pdf
isc N-Channel MOSFET Transistor IRFSL4310FEATURESStatic drain-source on-resistance:RDS(on) 7.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
..4. Size:255K inchange semiconductor
irfsl4310.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFSL4310FEATURESStatic drain-source on-resistance:RDS(on) 7.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T
0.1. Size:324K international rectifier
irfb4310zpbf irfs4310zpbf irfsl4310zpbf.pdf
PD - 97115DIRFB4310ZPbFIRFS4310ZPbFIRFSL4310ZPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8m:l Uninterruptible Power Supplyl High Speed Power Switching max. 6.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)127A cID (Package Limited)120A SBenefitsl Improved Gate,
0.2. Size:324K infineon
irfb4310zpbf irfs4310zpbf irfsl4310zpbf.pdf
PD - 97115DIRFB4310ZPbFIRFS4310ZPbFIRFSL4310ZPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8m:l Uninterruptible Power Supplyl High Speed Power Switching max. 6.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)127A cID (Package Limited)120A SBenefitsl Improved Gate,
0.3. Size:712K infineon
auirfs4310 auirfsl4310.pdf
AUIRFS4310 AUTOMOTIVE GRADE AUIRFSL4310 HEXFET Power MOSFET Features VDSS 100V Advanced Process Technology RDS(on) typ. 5.6m Ultra Low On-Resistance max. 7.0m 175C Operating Temperature Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Au
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