All MOSFET. BF998WR Datasheet

 

BF998WR MOSFET. Datasheet pdf. Equivalent

Type Designator: BF998WR

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.2 W

Maximum Drain-Source Voltage |Vds|: 12 V

Maximum Drain Current |Id|: 0.03 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 2.1 pF

Maximum Drain-Source On-State Resistance (Rds): 200 Ohm

Package: SOT343R

BF998WR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BF998WR Datasheet (PDF)

1.1. bf998wr 2.pdf Size:76K _philips

BF998WR
BF998WR

DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET 1997 Sep 05 Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR FEATURES PINNING High forward transfer admittance PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer

1.2. bf998wr.pdf Size:255K _philips

BF998WR
BF998WR

DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET Product specification 1997 Sep 05 Supersedes data of 1995 Apr 25 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR FEATURES PINNING ? High forward transfer admittance PIN SYMBOL DESCRIPTION ? Short channel transistor with high forward transfer 1s, b source admittance to input capacit

 4.1. bf998w.pdf Size:30K _siemens

BF998WR
BF998WR

BF 998W Silicon N-Channel MOSFET Tetrode Short-channel transistor with high S/C quality factor For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration Package BF 998W MOs Q62702-F1586 1 = D 2 = S 3 = G1 4 = G2 SOT-343 all electrical d

Datasheet: BF994SR , BF995 , BF996 , BF996S , BF996SR , BF997 , BF998 , BF998R , IRF840 , BFC10 , BFC11 , BFC12 , BFC13 , BFC14 , BFC15 , BFC16 , BFC17 .

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