IRFU3410
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFU3410
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 110
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 31
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 37
nC
trⓘ - Rise Time: 27
nS
Cossⓘ -
Output Capacitance: 220
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.039
Ohm
Package:
IPAK
IRFU3410
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFU3410
Datasheet (PDF)
..1. Size:231K international rectifier
irfr3410pbf irfu3410pbf.pdf 
PD - 95514AIRFR3410PbF IRFU3410PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters100V 39m 31Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pak I-Pakand Cu
..2. Size:231K infineon
irfr3410pbf irfu3410pbf.pdf
PD - 95514AIRFR3410PbF IRFU3410PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters100V 39m 31Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pak I-Pakand Cu
..3. Size:261K inchange semiconductor
irfu3410.pdf
isc N-Channel MOSFET Transistor IRFU3410FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
0.1. Size:842K cn vbsemi
irfu3410p.pdf
IRFU3410Pwww.VBsemi.twwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.036 at VGS = 10 V35 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTO-251APPLICATIONS Primary Side SwitchDGSG D SN-Channel MOSFETTop View
7.1. Size:230K international rectifier
irfr3411pbf irfu3411pbf.pdf
PD - 95371AIRFR3411PbFl Advanced Process TechnologyIRFU3411PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt Ratingl 175C Operating TemperatureDl Fast Switching VDSS = 100Vl Fully Avalanche Ratedl Lead-FreeRDS(on) = 44mGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 32ASRectifier utilize advanced processing techniques to
7.2. Size:239K international rectifier
irfr3418pbf irfu3418pbf.pdf
PD - 95516AIRFR3418PbF IRFU3418PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) Max IDl High frequency DC-DC convertersl Lead-Free 14m 30A80VBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pak I-Pakand Current
7.3. Size:228K international rectifier
irfr3412pbf irfu3412pbf.pdf
PD - 95498AIRFR3412PbFIRFU3412PbFSMPS MOSFETHEXFET Power MOSFETApplicationsl Switch Mode Power Supply (SMPS) VDSS RDS(on) max IDl Motor Drive100V 0.025 48Al Bridge Convertersl All Zero Voltage Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggedness D-Pak I-Pakl Fully Cha
7.4. Size:261K inchange semiconductor
irfu3411.pdf
isc N-Channel MOSFET Transistor IRFU3411FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
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