IRFU3505 Datasheet. Specs and Replacement

Type Designator: IRFU3505  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 71 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 74 nS

Cossⓘ - Output Capacitance: 470 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: IPAK

IRFU3505 substitution

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IRFU3505 datasheet

 ..1. Size:332K  international rectifier
 irfr3505pbf irfu3505pbf.pdf pdf_icon

IRFU3505

PD - 95511B IRFR3505PbF IRFU3505PbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 0.013 G Lead-Free ID = 30A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resis... See More ⇒

 ..2. Size:261K  inchange semiconductor
 irfu3505.pdf pdf_icon

IRFU3505

isc N-Channel MOSFET Transistor IRFU3505 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒

 0.1. Size:2741K  cn vbsemi
 irfu3505p.pdf pdf_icon

IRFU3505

IRFU3505P www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.011 at VGS = 10 V 55 Material categorization 60 0.012 at VGS = 4.5 V 47 TO-251 D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbo... See More ⇒

 7.1. Size:331K  international rectifier
 irfr3504zpbf irfu3504zpbf.pdf pdf_icon

IRFU3505

PD - 95521B IRFR3504ZPbF IRFU3504ZPbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V 175 C Operating Temperature Fast Switching RDS(on) = 9.0m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 42A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re... See More ⇒

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Detailed specifications: IRFU2405, IRFU2407, IRFU24N15D, IRFU2607Z, IRFU2905Z, IRFU3410, IRFU3411, IRFU3504Z, AON6380, IRFU3518, IRFU3607, IRFU3704Z, IRFU3707Z, IRFU3708, IRFU3709, IRFU3709Z, IRFU3710Z

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