IRLHS6342 MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRLHS6342
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 8.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 97 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0155 Ohm
   Package: PQFN2X2

IRLHS6342 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS