All MOSFET. IRLR7821C Datasheet

 

IRLR7821C MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLR7821C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1(min) V
   |Id|ⓘ - Maximum Drain Current: 65 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 4.2 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: DPAK

 IRLR7821C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLR7821C Datasheet (PDF)

 ..1. Size:322K  international rectifier
irlr7821cpbf irlu7821cpbf.pdf

IRLR7821C
IRLR7821C

PD - 96056IRLR7821CPbFIRLU7821CPbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 10m 10nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-PakI-Pakl

 6.1. Size:543K  international rectifier
irlr7821.pdf

IRLR7821C
IRLR7821C

PD - 94538IRLR7821IRLU7821HEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg High Frequency Synchronous BuckConverters for Computer Processor Power30V 10m10nC High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial UseBenefits Very Low RDS(on) at 4.5V VGS Ultra-Low Gate ImpedanceD-Pak I-Pak Fully Characterized Av

 6.2. Size:320K  international rectifier
irlr7821pbf irlu7821pbf.pdf

IRLR7821C
IRLR7821C

PD - 95091BIRLR7821PbFIRLU7821PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous BuckConverters for Computer Processor Power30V 10m 10nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSD-PakI-Pakl Ultra-Low Gate Impedance IRL

 6.3. Size:320K  infineon
irlr7821pbf irlu7821pbf.pdf

IRLR7821C
IRLR7821C

PD - 95091BIRLR7821PbFIRLU7821PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous BuckConverters for Computer Processor Power30V 10m 10nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSD-PakI-Pakl Ultra-Low Gate Impedance IRL

 6.4. Size:242K  inchange semiconductor
irlr7821.pdf

IRLR7821C
IRLR7821C

isc N-Channel MOSFET Transistor IRLR7821, IIRLR7821FEATURESStatic drain-source on-resistance:RDS(on)10mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK1189

 

 
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