IRLR8113 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLR8113
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 89 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.25 V
|Id|ⓘ - Maximum Drain Current: 94 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 22 nC
trⓘ - Rise Time: 3.8 nS
Cossⓘ - Output Capacitance: 610 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: DPAK
IRLR8113 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLR8113 Datasheet (PDF)
irlu8113pbf irlr8113pbf.pdf
PD - 95779AIRLR8113PbFIRLU8113PbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 6.0m 22nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSD-Pak I-Pakl Ultra-Low Gate ImpedanceIR
irlr8113.pdf
PD - 94621IRLR8113IRLU8113HEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous BuckConverters for Computer Processor Power30V 6.0m 22nCl High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial UseBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-Pak I-Pakl Fully Characterized
irlr8103 irlr8503.pdf
PD - 93838PD - 93839IRLR8103/IRLR8503IRLR8103/IRLR8503Provisional Data Sheet N-Channel Application-Specific MOSFETsHEXFET Chipset for DC-DC Converters Ideal for CPU Core DC-DC Converters Low Conduction LossesD Low Switching Losses Minimizes Parallel MOSFETs for high currentapplicationsDescriptionGThese new devices employ advanced HEXFET powerMO
irlr8103vpbf.pdf
PD - 95093AIRLR8103VPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching LossesD Minimizes Parallel MOSFETs for high currentapplications 100% RG Tested Lead-FreeGDescriptionThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedented balanceS D-Pakof
irlr8103v.pdf
PD-94021AIRLR8103V N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesD Low Switching Losses Minimizes Parallel MOSFETs for high currentapplicationsDescriptionGThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedentedbalance of on-resistance and gate charge. The reducedS D-
irlr8103vpbf.pdf
PD - 95093AIRLR8103VPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching LossesD Minimizes Parallel MOSFETs for high currentapplications 100% RG Tested Lead-FreeGDescriptionThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedented balanceS D-Pakof
irlr8103vtr.pdf
IRLR8103VTRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETA
irlr8103v.pdf
Isc N-Channel MOSFET Transistor IRLR8103VFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
