IRLU2905Z PDF and Equivalents Search

 ..1. Size:328K  international rectifier
 irlu2905zpbf irlr2905zpbf.pdf

PD - 95774B IRLR2905ZPbF IRLU2905ZPbF Features HEXFET Power MOSFET Logic Level D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 13.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 42A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extrem... See More ⇒

 ..2. Size:340K  international rectifier
 irlr2905zpbf irlu2905zpbf.pdf

PD - 95774B IRLR2905ZPbF IRLU2905ZPbF Features HEXFET Power MOSFET Logic Level D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 13.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 42A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extrem... See More ⇒

 ..3. Size:255K  inchange semiconductor
 irlu2905z.pdf

isc N-Channel MOSFET Transistor IRLU2905Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒

 6.1. Size:314K  international rectifier
 irlr2905pbf irlu2905pbf.pdf

PD- 95084A IRLR/U2905PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D l Surface Mount (IRLR2905) VDSS = 55V l Straight Lead (IRLU2905) l Advanced Process Technology RDS(on) = 0.027 l Fast Switching G l Fully Avalanche Rated ID = 42A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing t... See More ⇒

 6.2. Size:314K  international rectifier
 irlr2905 irlu2905.pdf

PD- 95084A IRLR/U2905PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D l Surface Mount (IRLR2905) VDSS = 55V l Straight Lead (IRLU2905) l Advanced Process Technology RDS(on) = 0.027 l Fast Switching G l Fully Avalanche Rated ID = 42A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing t... See More ⇒

 7.1. Size:335K  international rectifier
 irlr2908pbf irlu2908pbf.pdf

PD - 95552B IRLR2908PbF IRLU2908PbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance VDSS = 80V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 28m Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 30A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve ... See More ⇒

 7.2. Size:261K  inchange semiconductor
 irlu2908.pdf

isc N-Channel MOSFET Transistor IRLU2908 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒