AUIRF1010EZ MOSFET. Datasheet pdf. Equivalent
Type Designator: AUIRF1010EZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 140 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 84 A
Maximum Drain-Source On-State Resistance (Rds): 0.0085 Ohm
Package: TO220AB
AUIRF1010EZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AUIRF1010EZ PDF doc:
5.1. auirf5210s.pdf 
Size:236K _international_rectifier
AUTOMOTIVE GRADE AUIRF5210S Features HEXFET® Power MOSFET l Advanced Planar Technology l P-Channel MOSFET D V(BR)DSS -100V l Low On-Resistance l Dynamic dV/dT Rating RDS(on) max. 60m G l 175°C Operating Temperature S ID -38A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax D l Lead-Free, RoHS Compliant l Automotive Qualified * Desc
Datasheet: IRLU8721 , IRLU8726 , IRLU8729 , IRLU8743 , IRLZ44Z , IRLZ44ZL , IRLZ44ZS , SI4420DY , IRF3205 , AUIRF1010EZL , AUIRF1010EZS , AUIRF1010Z , AUIRF1010ZL , AUIRF1010ZS , AUIRF1018E , AUIRF1018ES , AUIRF1324 .
