AUIRF1018ES MOSFET Datasheet: N-Ch, 60V, 79A. Full specification with pinout and replacement list

AUIRF1018ES Specs and Replacement

Type Designator: AUIRF1018ES

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 79 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm

Package: D2PAK

AUIRF1018ES substitution

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AUIRF1018ES datasheet

..1. Size:658K infineon
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AUTOMOTIVE GRADE AUIRF1018ES HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. Ultra Low On-Resistance 7.1m 175 C Operating Temperature max. 8.4m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 79A Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed fo... See More ⇒

4.1. Size:156K infineon
auirf1018e.pdf pdf_icon

International Rectifier Product Detail Page Page 1 of 2 Part Se AUIRF1018E Part Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package Description Support Docs N/A Commercial Datasheet Reliability Report Automotive Market IR serves the automotive market with a dedicated product portfolio, with high quality and automotive certified development, manufact... See More ⇒

6.1. Size:375K international rectifier
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PD - 95962 AUTOMOTIVE GRADE AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V(BR)DSS 60V 175 C Operating Temperature Fast Switching RDS(on) max. 8.5m Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 84A Lead-Free, RoHS Compliant S Automotive Qualified * ID (Package Limited)... See More ⇒

6.2. Size:268K international rectifier
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PD - 97458A AUIRF1010Z AUTOMOTIVE GRADE AUIRF1010ZS AUIRF1010ZL Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature V(BR)DSS 55V Fast Switching Repetitive Avalanche Allowed up to RDS(on) max. 7.5m Tjmax G Lead-Free, RoHS Compliant ID (Silicon Limited) 94A Automotive Qualified * S... See More ⇒