All MOSFET. AUIRF2903ZS Datasheet

 

AUIRF2903ZS Datasheet and Replacement


   Type Designator: AUIRF2903ZS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 231 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 235 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 160 nC
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 1980 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: TO263
 

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AUIRF2903ZS Datasheet (PDF)

 ..1. Size:705K  infineon
 auirf2903zs auirf2903zl.pdf pdf_icon

AUIRF2903ZS

AUIRF2903ZS AUTOMOTIVE GRADE AUIRF2903ZL Features VDSS 30V Advanced Process Technology RDS(on) typ. 1.9m Ultra Low On-Resistance max. 2.4m 175C Operating Temperature ID (Silicon Limited) 235A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 160A Lead-Free, RoHS Compliant Automotive Qualifie

 4.1. Size:419K  infineon
 auirf2903z.pdf pdf_icon

AUIRF2903ZS

AUTOMOTIVE GRADE AUIRF2903Z Features HEXFET Power MOSFET Advanced Planar Technology VDSS 30V Ultra Low On-Resistance RDS(on) typ. 1.9m 175C Operating Temperature max. 2.4m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 260A Lead-Free, RoHS Compliant ID (Package Limited) 160A Automotive Qu

 6.1. Size:293K  international rectifier
 auirf2907zs-7p.pdf pdf_icon

AUIRF2903ZS

PD - 96321AUTOMOTIVE GRADEAUIRF2907ZS-7PHEXFET Power MOSFETFeaturesDV(BR)DSS75Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.3.0ml 175C Operating TemperatureGl Fast Switchingmax. 3.8mSl Repetitive Avalanche Allowed up to TjmaxS (Pin 2, 3, 5, 6, 7)ID (Silicon Limited)180A l Lead-Free, RoHS CompliantG (Pin 1)l Automot

 6.2. Size:287K  international rectifier
 auirf2907z.pdf pdf_icon

AUIRF2903ZS

PD - 97545AUTOMOTIVE GRADEAUIRF2907ZHEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS75V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) max.4.5m Fast SwitchingG Repetitive Avalanche Allowed up to ID (Silicon Limited)170ATjmaxSID (Package Limited)75A Lead-Free, RoHS Compliant Automotive Qualified *

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History: JCS5N50FC | SLP5N50S | MDF5N50ZTH | IRFB4020PBF

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