AUIRF3805S-7P MOSFET Datasheet: N-Ch, 55V, 240A. Full specification with pinout and replacement list

AUIRF3805S-7P Specs and Replacement

Type Designator: AUIRF3805S-7P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 240 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 1260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: TO263-7

AUIRF3805S-7P substitution

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AUIRF3805S-7P datasheet

..1. Size:743K infineon
auirf3805s-7p auirf3805l-7p.pdf pdf_icon

AUIRF3805S-7P AUTOMOTIVE GRADE AUIRF3805L-7P Features VDSS 55V Advanced Process Technology RDS(on) typ. 2.0m Ultra Low On-Resistance 175 C Operating Temperature max. 2.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 240A Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed... See More ⇒

4.1. Size:382K international rectifier
auirf3805strl.pdf pdf_icon

PD - 96319 AUTOMOTIVE GRADE AUIRF3805 AUIRF3805S AUIRF3805L Features HEXFET Power MOSFET l Advanced Process Technology V(BR)DSS 55V D l Ultra Low On-Resistance RDS(on) typ. 2.6m l 175 C Operating Temperature l Fast Switching max. 3.3m G l Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 210A l Lead-Free, RoHS Compliant S l Automotive Qualified * ID ... See More ⇒

4.2. Size:754K infineon
auirf3805 auirf3805s auirf3805l.pdf pdf_icon

AUIRF3805 AUIRF3805S AUTOMOTIVE GRADE AUIRF3805L Features VDSS 55V Advanced Process Technology RDS(on) typ. 2.6m Ultra Low On-Resistance max. 3.3m 175 C Operating Temperature ID (Silicon Limited) 210A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 160A Lead-Free, RoHS Compliant Automotiv... See More ⇒

6.1. Size:221K international rectifier
auirf3808.pdf pdf_icon

PD - 97697A AUTOMOTIVE GRADE AUIRF3808 HEXFET Power MOSFET Features l Advanced Planar Technology D V(BR)DSS 75V l Low On-Resistance RDS(on) typ. 5.9m l Dynamic dv/dt Rating G l 175 C Operating Temperature max 7.0m l Fast Switching S ID 140A l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* D ... See More ⇒