All MOSFET. AUIRF3808 Datasheet

 

AUIRF3808 Datasheet and Replacement


   Type Designator: AUIRF3808
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 330 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 140 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 150 nC
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 890 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO220AB
 

 AUIRF3808 substitution

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AUIRF3808 Datasheet (PDF)

 ..1. Size:221K  international rectifier
 auirf3808.pdf pdf_icon

AUIRF3808

PD - 97697AAUTOMOTIVE GRADEAUIRF3808HEXFET Power MOSFETFeaturesl Advanced Planar TechnologyDV(BR)DSS75Vl Low On-ResistanceRDS(on) typ.5.9ml Dynamic dv/dt RatingGl 175C Operating Temperaturemax 7.0ml Fast SwitchingSID140Al Fully Avalanche Ratedl Repetitive Avalanche Allowedup to Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*D

 0.1. Size:220K  international rectifier
 auirf3808s.pdf pdf_icon

AUIRF3808

PD - 97698AAUTOMOTIVE GRADEAUIRF3808SHEXFET Power MOSFETFeatures Advanced Planar TechnologyD Low On-Resistance VDSS 75V Dynamic dV/dT RatingRDS(on) typ.5.9m 175C Operating TemperatureG max. 7.0m Fast SwitchingS Fully Avalanche Rated ID106A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive

 6.1. Size:382K  international rectifier
 auirf3805strl.pdf pdf_icon

AUIRF3808

PD - 96319AUTOMOTIVE GRADEAUIRF3805AUIRF3805SAUIRF3805LFeatures HEXFET Power MOSFETl Advanced Process TechnologyV(BR)DSS55VDl Ultra Low On-ResistanceRDS(on) typ.2.6ml 175C Operating Temperaturel Fast Switching max. 3.3mGl Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited)210A l Lead-Free, RoHS CompliantSl Automotive Qualified * ID

 6.2. Size:743K  infineon
 auirf3805s-7p auirf3805l-7p.pdf pdf_icon

AUIRF3808

AUIRF3805S-7P AUTOMOTIVE GRADE AUIRF3805L-7P Features VDSS 55V Advanced Process Technology RDS(on) typ. 2.0m Ultra Low On-Resistance 175C Operating Temperature max. 2.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 240A Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed

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Keywords - AUIRF3808 MOSFET datasheet

 AUIRF3808 cross reference
 AUIRF3808 equivalent finder
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