All MOSFET. AUIRFB3307Z Datasheet

 

AUIRFB3307Z Datasheet and Replacement


   Type Designator: AUIRFB3307Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 128 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: TO220AB
 

 AUIRFB3307Z substitution

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AUIRFB3307Z Datasheet (PDF)

 7.1. Size:282K  international rectifier
auirfb3207.pdf pdf_icon

AUIRFB3307Z

PD - 96322AUTOMOTIVE GRADEAUIRFB3207HEXFET Power MOSFETFeaturesD V(BR)DSS75Vl Advanced Process Technologyl Ultra Low On-Resistance RDS(on) typ.3.6ml 175C Operating Temperaturemax. 4.5mGl Fast SwitchingID (Silicon Limited)170A l Repetitive Avalanche Allowed up to TjmaxSl Lead-Free, RoHS CompliantID (Package Limited)75A l Automotive Qualified *

 8.1. Size:398K  international rectifier
auirfb8409 auirfs8409 auirfsl8409.pdf pdf_icon

AUIRFB3307Z

AUIRFB8409AUTOMOTIVE GRADE AUIRFS8409AUIRFSL8409FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) (SMD) typ. 0.97ml Fast Switching max. 1.2ml Repetitive Avalanche Allowed up to TjmaxGl Lead-Free, RoHS Compliant ID (Silicon Limited) 409Al Automotive Qualified *ID (Package Li

 8.2. Size:278K  international rectifier
auirfb4410.pdf pdf_icon

AUIRFB3307Z

PD - 97598AUTOMOTIVE GRADEAUIRFB4410HEXFET Power MOSFETFeatures Advanced Process TechnologyDVDSS100V Ultra Low On-Resistance Dynamic dV/dT RatingRDS(on) typ.8.0m 175C Operating Temperature max. 10m Fast SwitchingG Repetitive Avalanche Allowed up toID (Silicon Limited)88ATjmax Lead-Free, RoHS CompliantID (Package Limited)

 8.3. Size:211K  international rectifier
auirfba1405.pdf pdf_icon

AUIRFB3307Z

PD-97768AUTOMOTIVE GRADEAUIRFBA1405HEXFET Power MOSFETFeaturesl Advanced Planar TechnologyDV(BR)DSS 55Vl Low On-ResistanceRDS(on) typ. 4.3ml Dynamic dv/dt Ratingl 175C Operating Temperature max 5.0mGl Fast SwitchingID (Silicon Limited) 174Al Fully Avalanche RatedID (Package Limited) 95Al Repetitive Avalanche Allowed Sup to Tjmaxl Lead-Free, RoHS

Datasheet: AUIRF9Z34N , AUIRFB3004 , AUIRFB3006 , AUIRFB3077 , AUIRFB3206 , AUIRFB3207 , AUIRFB3207Z , AUIRFB3306 , RU7088R , AUIRFB3607 , AUIRFB3806 , AUIRFB4110 , AUIRFB4115 , AUIRFB4127 , AUIRFB4227 , AUIRFB4310Z , AUIRFB4321 .

History: BUZ73AL | MP4N150 | PMPB12UNEA | SSM3K329R

Keywords - AUIRFB3307Z MOSFET datasheet

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