AUIRFB4110 MOSFET. Datasheet pdf. Equivalent

   Type Designator: AUIRFB4110
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 370 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 150 nC
   trⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 670 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO220AB

AUIRFB4110 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AUIRFB4110 Datasheet (PDF)

7.1. Size:278K infineon
auirfb4410.pdf

PD - 97598AUTOMOTIVE GRADEAUIRFB4410HEXFET Power MOSFETFeatures Advanced Process TechnologyDVDSS100V Ultra Low On-Resistance Dynamic dV/dT RatingRDS(on) typ.8.0m 175C Operating Temperature max. 10m Fast SwitchingG Repetitive Avalanche Allowed up toID (Silicon Limited)88ATjmax Lead-Free, RoHS CompliantID (Package Limited)

7.2. Size:717K infineon
auirfb4610 auirfs4610.pdf

AUIRFB4610 AUTOMOTIVE GRADE AUIRFS4610 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Enhanced dV/dT and dI/dT capability 175C Operating Temperature max. 14m Fast Switching ID 73A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive

8.1. Size:398K international rectifier
auirfb8409 auirfs8409 auirfsl8409.pdf

AUIRFB8409AUTOMOTIVE GRADE AUIRFS8409AUIRFSL8409FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) (SMD) typ. 0.97ml Fast Switching max. 1.2ml Repetitive Avalanche Allowed up to TjmaxGl Lead-Free, RoHS Compliant ID (Silicon Limited) 409Al Automotive Qualified *ID (Package Li

8.2. Size:211K international rectifier
auirfba1405.pdf

PD-97768AUTOMOTIVE GRADEAUIRFBA1405HEXFET Power MOSFETFeaturesl Advanced Planar TechnologyDV(BR)DSS 55Vl Low On-ResistanceRDS(on) typ. 4.3ml Dynamic dv/dt Ratingl 175C Operating Temperature max 5.0mGl Fast SwitchingID (Silicon Limited) 174Al Fully Avalanche RatedID (Package Limited) 95Al Repetitive Avalanche Allowed Sup to Tjmaxl Lead-Free, RoHS

8.3. Size:282K international rectifier
auirfb3207.pdf

PD - 96322AUTOMOTIVE GRADEAUIRFB3207HEXFET Power MOSFETFeaturesD V(BR)DSS75Vl Advanced Process Technologyl Ultra Low On-Resistance RDS(on) typ.3.6ml 175C Operating Temperaturemax. 4.5mGl Fast SwitchingID (Silicon Limited)170A l Repetitive Avalanche Allowed up to TjmaxSl Lead-Free, RoHS CompliantID (Package Limited)75A l Automotive Qualified *

8.4. Size:222K international rectifier
auirfb8405.pdf

AUTOMOTIVE GRADEAUIRFB8405FeaturesHEXFET Power MOSFET Advanced Process TechnologyD New Ultra Low On-ResistanceVDSS 40V 175C Operating TemperatureRDS(on) typ.2.1m Fast Switching Repetitive Avalanche Allowed up to Tjmax max. 2.5m Lead-Free, RoHS Compliant GID (Silicon Limited) 185A Automotive Qualified *ID (Package Limited) 120A S

8.5. Size:340K international rectifier
auirfb8407 auirfs8407 auirfsl8407.pdf

AUIRFB8407AUTOMOTIVE GRADEAUIRFS8407AUIRFSL8407FeaturesHEXFET Power MOSFETl Advanced Process Technologyl New Ultra Low On-ResistanceVDSS 40VDl 175C Operating TemperatureRDS(on) typ. 1.4ml Fast Switching l Repetitive Avalanche Allowed up to Tjmax(SMD version) max. 1.8m l Lead-Free, RoHS CompliantG250AID (Silicon Limited) Automotive Qualified *S

8.6. Size:398K infineon
auirfb8409 auirfs8409 auirfsl8409.pdf