All MOSFET. AUIRFB4127 Datasheet

 

AUIRFB4127 MOSFET. Datasheet pdf. Equivalent

Type Designator: AUIRFB4127

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 375 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 76 A

Total Gate Charge (Qg): 100 nC

Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm

Package: TO220AB

AUIRFB4127 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AUIRFB4127 Datasheet (PDF)

4.1. auirfb8405.pdf Size:222K _update-mosfet

AUIRFB4127
AUIRFB4127

AUTOMOTIVE GRADE AUIRFB8405 Features HEXFET® Power MOSFET  Advanced Process Technology D  New Ultra Low On-Resistance VDSS 40V  175°C Operating Temperature RDS(on) typ.2.1mΩ  Fast Switching  Repetitive Avalanche Allowed up to Tjmax max. 2.5mΩ  Lead-Free, RoHS Compliant G  ID (Silicon Limited) 185A  Automotive Qualified * ID (Package Limited) 120A S

4.2. auirfb8407 auirfs8407 auirfsl8407.pdf Size:340K _international_rectifier

AUIRFB4127
AUIRFB4127

AUIRFB8407 AUTOMOTIVE GRADE AUIRFS8407 AUIRFSL8407 Features HEXFET® Power MOSFET l Advanced Process Technology l New Ultra Low On-Resistance VDSS 40V D l 175°C Operating Temperature RDS(on) typ. 1.4m l Fast Switching Ω l Repetitive Avalanche Allowed up to Tjmax (SMD version) max. 1.8m Ω l Lead-Free, RoHS Compliant G 250A ID (Silicon Limited) Automotive Qualified * S

 4.3. auirfba1405.pdf Size:211K _international_rectifier

AUIRFB4127
AUIRFB4127

PD-97768 AUTOMOTIVE GRADE AUIRFBA1405 HEXFET® Power MOSFET Features l Advanced Planar Technology D V(BR)DSS 55V l Low On-Resistance RDS(on) typ. 4.3m l Dynamic dv/dt Rating l 175°C Operating Temperature max 5.0m G l Fast Switching ID (Silicon Limited) 174A l Fully Avalanche Rated ID (Package Limited) 95A l Repetitive Avalanche Allowed S up to Tjmax l Lead-Free, RoHS

4.4. auirfb8409 auirfs8409 auirfsl8409.pdf Size:398K _international_rectifier

AUIRFB4127
AUIRFB4127

AUIRFB8409 AUTOMOTIVE GRADE AUIRFS8409 AUIRFSL8409 Features HEXFET® Power MOSFET l Advanced Process Technology D l New Ultra Low On-Resistance VDSS 40V l 175°C Operating Temperature RDS(on) (SMD) typ. 0.97mΩ l Fast Switching max. 1.2mΩ l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free, RoHS Compliant ID (Silicon Limited) 409A l Automotive Qualified * ID (Package Li

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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