All MOSFET. AUIRFB4620 Datasheet

 

AUIRFB4620 Datasheet and Replacement


   Type Designator: AUIRFB4620
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 144 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 25 nC
   tr ⓘ - Rise Time: 22.4 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0725 Ohm
   Package: TO220AB
 

 AUIRFB4620 substitution

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AUIRFB4620 Datasheet (PDF)

 6.1. Size:717K  infineon
 auirfb4610 auirfs4610.pdf pdf_icon

AUIRFB4620

AUIRFB4610 AUTOMOTIVE GRADE AUIRFS4610 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Enhanced dV/dT and dI/dT capability 175C Operating Temperature max. 14m Fast Switching ID 73A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive

 7.1. Size:278K  international rectifier
 auirfb4410.pdf pdf_icon

AUIRFB4620

PD - 97598AUTOMOTIVE GRADEAUIRFB4410HEXFET Power MOSFETFeatures Advanced Process TechnologyDVDSS100V Ultra Low On-Resistance Dynamic dV/dT RatingRDS(on) typ.8.0m 175C Operating Temperature max. 10m Fast SwitchingG Repetitive Avalanche Allowed up toID (Silicon Limited)88ATjmax Lead-Free, RoHS CompliantID (Package Limited)

 8.1. Size:398K  international rectifier
 auirfb8409 auirfs8409 auirfsl8409.pdf pdf_icon

AUIRFB4620

AUIRFB8409AUTOMOTIVE GRADE AUIRFS8409AUIRFSL8409FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) (SMD) typ. 0.97ml Fast Switching max. 1.2ml Repetitive Avalanche Allowed up to TjmaxGl Lead-Free, RoHS Compliant ID (Silicon Limited) 409Al Automotive Qualified *ID (Package Li

 8.2. Size:211K  international rectifier
 auirfba1405.pdf pdf_icon

AUIRFB4620

PD-97768AUTOMOTIVE GRADEAUIRFBA1405HEXFET Power MOSFETFeaturesl Advanced Planar TechnologyDV(BR)DSS 55Vl Low On-ResistanceRDS(on) typ. 4.3ml Dynamic dv/dt Ratingl 175C Operating Temperature max 5.0mGl Fast SwitchingID (Silicon Limited) 174Al Fully Avalanche RatedID (Package Limited) 95Al Repetitive Avalanche Allowed Sup to Tjmaxl Lead-Free, RoHS

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Keywords - AUIRFB4620 MOSFET datasheet

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