All MOSFET. AUIRFP4368 Datasheet

 

AUIRFP4368 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AUIRFP4368
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 350 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 380 nC
   trⓘ - Rise Time: 220 nS
   Cossⓘ - Output Capacitance: 1670 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00185 Ohm
   Package: TO247AC

 AUIRFP4368 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AUIRFP4368 Datasheet (PDF)

 6.1. Size:676K  international rectifier
auirfp4310z.pdf

AUIRFP4368
AUIRFP4368

AUTOMOTIVE GRADE AUIRFP4310Z Features VDSS 100V Advanced Process Technology RDS(on) typ. 4.8m Ultra Low On-Resistance max. Dynamic dv/dt Rating 6.0m 175C Operating Temperature ID (Silicon Limited) 128A Fast Switching ID (Package Limited) 120A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Autom

 7.1. Size:381K  international rectifier
auirfp4568-e.pdf

AUIRFP4368
AUIRFP4368

AUTOMOTIVE GRADEAUIRFP4568AUIRFP4568-EFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS 150Vl 175C Operating TemperatureRDS(on) typ.4.8ml Fast Switchingl Repetitive Avalanche Allowed up to Tjmax G max. 5.9ml Lead-Free, RoHS CompliantSID 171Al Automotive Qualified *DDescriptionDSpecif

 7.2. Size:373K  international rectifier
auirfp4409.pdf

AUIRFP4368
AUIRFP4368

AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology DVDSS 300V Low On-Resistance 175C Operating Temperature RDS(on) typ. 56mFast Switching G 69mmax Repetitive Avalanche Allowed up to Tjmax SLead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical

 7.3. Size:275K  infineon
auirfp4004.pdf

AUIRFP4368
AUIRFP4368

PD - 96407AAUTOMOTIVE GRADEAUIRFP4004HEXFET Power MOSFETFeatures Advanced Process Technology VDSS 40VD Low On-ResistanceRDS(on) typ. 1.35m 175C Operating Temperature max. 1.70m Fast SwitchingGID (Silicon Limited)350A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantID (Package Limited) 195AS Automotive Qualified *DescriptionDS

 7.4. Size:549K  infineon
auirfp4568.pdf

AUIRFP4368
AUIRFP4368

AUIRFP4568 AUTOMOTIVE GRADE AUIRFP4568-E Features VDSS 150V Advanced Planar Technology RDS(on) typ. 4.8m Ultra Low On-Resistance Dynamic dv/dt Rating max. 5.9m 175C Operating Temperature ID 171A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description S

 7.5. Size:476K  infineon
auirfp4409.pdf

AUIRFP4368
AUIRFP4368

AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology DVDSS 300V Low On-Resistance 175C Operating Temperature RDS(on) typ. 56mFast Switching G 69mmax Repetitive Avalanche Allowed up to Tjmax SLead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical

 7.6. Size:519K  infineon
auirfp4110.pdf

AUIRFP4368
AUIRFP4368

AUTOMOTIVE GRADE AUIRFP4110 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V DUltra Low On-Resistance RDS(on) typ. 3.7mEnhanced dV/dT and dI/dT capability 4.5mmax 175C Operating Temperature GID (Silicon Limited) 180A Fast Switching SRepetitive Avalanche Allowed up to Tjmax ID (Package Lim

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IXFK140N20P

 

 
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