All MOSFET. AUIRFP4668 Datasheet

 

AUIRFP4668 MOSFET. Datasheet pdf. Equivalent

Type Designator: AUIRFP4668

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 520 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Drain Current |Id|: 130 A

Total Gate Charge (Qg): 161 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0097 Ohm

Package: TO247AC

AUIRFP4668 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AUIRFP4668 Datasheet (PDF)

3.1. auirfp4568-e.pdf Size:381K _international_rectifier

AUIRFP4668
AUIRFP4668

AUTOMOTIVE GRADE AUIRFP4568 AUIRFP4568-E Features HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS 150V l 175°C Operating Temperature RDS(on) typ.4.8mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G max. 5.9mΩ l Lead-Free, RoHS Compliant S ID 171A l Automotive Qualified * D Description D Specif

3.2. auirfp4409.pdf Size:373K _international_rectifier

AUIRFP4668
AUIRFP4668

AUTOMOTIVE GRADE AUIRFP4409 HEXFET® Power MOSFET Features Advanced Process Technology D VDSS 300V Low On-Resistance 175°C Operating Temperature RDS(on) typ. 56m Fast Switching G 69m max Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical

 4.1. auirfp2602.pdf Size:207K _international_rectifier

AUIRFP4668
AUIRFP4668

PD - 96420 AUTOMOTIVE GRADE AUIRFP2602 HEXFET® Power MOSFET Features Advanced Process Technology D V(BR)DSS 24V Low On-Resistance 175°C Operating Temperature RDS(on) typ. 1.25m Ω Fast Switching max. 1.6m Ω Repetitive Avalanche Allowed up to Tjmax G Lead-Free, RoHS Compliant ID (Silicon Limited) 380A Automotive Qualified * S ID (Package Limited) 180A Description

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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