All MOSFET. AUIRFS3004 Datasheet

 

AUIRFS3004 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AUIRFS3004
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 380 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 340 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 160 nC
   trⓘ - Rise Time: 220 nS
   Cossⓘ - Output Capacitance: 2020 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00175 Ohm
   Package: TO263

 AUIRFS3004 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AUIRFS3004 Datasheet (PDF)

 ..1. Size:711K  infineon
 auirfs3004 auirfsl3004.pdf

AUIRFS3004 AUIRFS3004

AUIRFS3004 AUTOMOTIVE GRADE AUIRFSL3004 HEXFET Power MOSFET Features VDSS 40V Advanced Process Technology RDS(on) typ. 1.4m Ultra Low On-Resistance max. 175C Operating Temperature 1.75m Fast Switching ID (Silicon Limited) 340A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 195A Lead-Free, RoHS Compliant

 0.1. Size:453K  infineon
 auirfs3004-7p.pdf

AUIRFS3004 AUIRFS3004

AUIRFS3004-7P AUTOMOTIVE GRADE HEXFET Power MOSFET Features VDSS 40V Advanced Process Technology RDS(on) typ. 0.90m Ultra Low On-Resistance 175C Operating Temperature max. 1.25m Fast Switching ID (Silicon Limited) 400A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 240A Lead-Free, RoHS Compliant Automotive Q

 5.1. Size:667K  infineon
 auirfs3006.pdf

AUIRFS3004 AUIRFS3004

AUTOMOTIVE GRADE AUIRFS3006 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 2.0m Ultra Low On-Resistance max. Dynamic dv/dt Rating 2.5m 175C Operating Temperature ID (Silicon Limited) 270A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compl

 5.2. Size:682K  infineon
 auirfs3006-7p.pdf

AUIRFS3004 AUIRFS3004

AUIRFS3006-7P AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.5m Dynamic dV/dT Rating max. 2.1m 175C Operating Temperature ID (Silicon Limited) 293A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 240A Lead-Free, RoHS

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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