BFR84 MOSFET. Datasheet pdf. Equivalent
Type Designator: BFR84
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
|Id|ⓘ - Maximum Drain Current: 0.05 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 5.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm
Package: TO72
BFR84 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BFR84 Datasheet (PDF)
bfr840l3rhesd.pdf
BFR840L3RHESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFR840L3RHESD is a dicrete RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection suitable for 5 GHz band applications.Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency fT = 75 GHz
bfr843el3.pdf
BFR843EL3Low noise broadband pre-matched RF bipolar transistorProduct descriptionThe BFR843EL3 is a low noise dual band pre-matched transistor in a low profile packagefor high speed and low power consumption applications.Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power and1 kV HBM ESD hardness High transition frequenc
Datasheet: BFC50 , BFC51 , BFC52 , BFC61 , BFC62 , BFC63 , BFR30 , BFR31 , AO4407 , BFS28R , BFT46 , BS107P , BS107PT , BS108 , BS170 , BS170F , BS170P .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918