AUIRFSL3206 MOSFET Datasheet: N-Ch, 60V, 210A. Full specification with pinout and replacement list

AUIRFSL3206 Specs and Replacement

Type Designator: AUIRFSL3206

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 210 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 82 nS

Cossⓘ - Output Capacitance: 720 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: TO262

AUIRFSL3206 substitution

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AUIRFSL3206 datasheet

..1. Size:716K infineon
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AUIRFS3206 AUTOMOTIVE GRADE AUIRFSL3206 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 2.4m Ultra Low On-Resistance max. 3.0m Enhanced dV/dT and dI/dT capability 175 C Operating Temperature ID (Silicon Limited) 210A Fast Switching ID (Package Limited) 120A Repetitive Avalanche Allowed up to Tj... See More ⇒

4.1. Size:704K infineon
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6.1. Size:707K infineon
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AUIRFS3307Z AUTOMOTIVE GRADE AUIRFSL3307Z HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 4.6m Ultra Low On-Resistance max. 5.8m 175 C Operating Temperature Fast Switching ID (Silicon Limited) 128A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 120A Lead-Free, RoHS Compliant ... See More ⇒

6.2. Size:711K infineon
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