All MOSFET. BS107P Datasheet

 

BS107P MOSFET. Datasheet pdf. Equivalent

Type Designator: BS107P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.5 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 0.12 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 23 Ohm

Package: ELine

BS107P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BS107P PDF doc:

1.1. bs107p.pdf Size:25K _diodes

BS107P

N-CHANNEL ENHANCEMENT BS107P MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS * RDS(on)=23? D G S REFER TO BS107PT FOR GRAPHS E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25°C ID 0.12 A Pulsed Drain Current IDM 2A Gate-Source Voltage VGS ±20 V Power Dissipation at Ta

1.2. bs107pt.pdf Size:47K _diodes

BS107P
BS107P

N-CHANNEL ENHANCEMENT PT BS107PT MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS VGS= * RDS(on)=28? 10V 6V D 4V G S E-Line TO92 Compatible 3V ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT 8 10 Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25°C ID 0.12 A Pulsed Drain Current IDM 2A Gate-Source Voltage VGS ±20 V Power Dissipation

5.1. bs107rev1.pdf Size:76K _motorola

BS107P
BS107P

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BS107/D TMOS Switching BS107 N–Channel — Enhancement 1 DRAIN BS107A 2 GATE ? 3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 200 Vdc 1 2 3 Gate–Source Voltage — Continuous VGS ±20 Vdc CASE 29–04, STYLE 30 — Non–repetitive (tp ? 50 µs) VGSM ±30 Vpk TO–92 (TO–226AA) Drain Current mAdc Con

5.2. bs107a_cnv_2.pdf Size:49K _philips

BS107P
BS107P

DISCRETE SEMICONDUCTORS DATA SHEET BS107A N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BS107A D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, Drain-source voltage VDS max. 200 V etc. Gat

5.3. bs107_cnv_2.pdf Size:65K _philips

BS107P
BS107P

DISCRETE SEMICONDUCTORS DATA SHEET BS107 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BS107 D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. VDS drain-sour

5.4. tn2404k_tn2404kl_bs107kl_2.pdf Size:89K _vishay

BS107P
BS107P

5.5. tn2404k_tn2404kl_bs107kl.pdf Size:70K _vishay

BS107P
BS107P

5.6. bs107.pdf Size:86K _infineon

BS107P
BS107P

BS 107 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 Pin 2 Pin 3 S G D Type VDS ID RDS(on) Package Marking BS 107 200 V 0.13 A 26 ? TO-92 BS 107 Type Ordering Code Tape and Reel Information BS 107 Q67000-S078 E6288 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 200 V V Drain-gate voltage DGR RGS =

5.7. bs107a.pdf Size:94K _onsemi

BS107P
BS107P

BS107A Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 Features http://onsemi.com • AEC Qualified 250 mAMPS, 200 VOLTS • PPAP Capable RDS(on) = 6.4 W • This is a Pb-Free Device* N-Channel D MAXIMUM RATINGS Rating Symbol Value Unit G Drain -Source Voltage VDS 200 Vdc Gate-Source Voltage - Continuous VGS ± 20 Vdc S - Non-repetitive (tp ? 50 ms) VGSM ± 30 Vpk Drain Curre

Datasheet: BFC61 , BFC62 , BFC63 , BFR30 , BFR31 , BFR84 , BFS28R , BFT46 , IRFP4332 , BS107PT , BS108 , BS170 , BS170F , BS170P , BS250F , BS250P , BS270 .

 


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