All MOSFET. AUIRL3705N Datasheet

 

AUIRL3705N MOSFET. Datasheet pdf. Equivalent

Type Designator: AUIRL3705N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 170 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Drain Current |Id|: 89 A

Total Gate Charge (Qg): 98 nC

Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm

Package: TO220AB

AUIRL3705N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AUIRL3705N Datasheet (PDF)

5.1. auirl3705zstrl.pdf Size:378K _international_rectifier

AUIRL3705N
AUIRL3705N

PD - 96345AUTOMOTIVE GRADEAUIRL3705ZAUIRL3705ZSAUIRL3705ZLFeaturesHEXFET Power MOSFETl Logic LevelV(BR)DSS 55VDl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.6.5ml 175C Operating Temperaturel Fast Switching max. 8.0mGl Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited)86A l Lead-Free, RoHS CompliantSl Automotiv

9.1. auirl7766m2tr.pdf Size:228K _international_rectifier

AUIRL3705N
AUIRL3705N

PD - 97648AUIRL7766M2TRAUTOMOTIVE GRADEAUIRL7766M2TR1 Automotive DirectFET Power MOSFET V(BR)DSS100V Advanced Process Technology Optimized for Automotive DC-DC andRDS(on) typ.8.0mother Heavy Load Applicationsmax. Logic Level Gate Drive 10m Exceptionally Small Footprint and Low ProfileID (Silicon Limited)51A High Power DensityQg 44nC

9.2. auirlz24nl auirlz24ns.pdf Size:271K _international_rectifier

AUIRL3705N
AUIRL3705N

AUIRLZ24NSAUTOMOTIVE GRADEAUIRLZ24NLFeatures HEXFET Power MOSFETDl Advanced Process TechnologyVDSS 55Vl Logic Level Gate Drivel 175C Operating TemperatureRDS(on) max. 0.06l Fast SwitchingGl Repetitive Avalanche Allowed up to TjmaxID 18A l Lead-Free, RoHS Compliant Sl Automotive Qualified *DDDescriptionSpecifically designed for Automotive application

 9.3. auirlr024ntr.pdf Size:312K _international_rectifier

AUIRL3705N
AUIRL3705N

PD- 96348AUTOMOTIVE GRADEAUIRLR024NAUIRLU024NFeatures Advanced Planar TechnologyHEXFET Power MOSFET Low On-ResistanceD Logic-Level Gate DriveV(BR)DSS 55V Dynamic dV/dT Rating 175C Operating TemperatureRDS(on) max.0.065 Fast SwitchingG Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax S ID 17A Lead-Free, RoHS Compliant Automotive Qual

9.4. auirl7732s2tr1.pdf Size:216K _international_rectifier

AUIRL3705N
AUIRL3705N

PD - 97635AAUTOMOTIVE GRADEAUIRL7732S2TRAUIRL7732S2TR1DirectFET Power MOSFET Logic LevelV(BR)DSS40V Advanced Process Technology Optimized for Automotive DC-DC, Motor Drive and RDS(on) typ.5.0m other Heavy Load Applicationsmax. 6.6m Exceptionally Small Footprint and Low ProfileID (Silicon Limited) High Power Density 58A Low Parasitic Pa

 9.5. auirl7736m2tr.pdf Size:230K _international_rectifier

AUIRL3705N
AUIRL3705N

PD - 97656AUTOMOTIVE GRADEAUIRL7736M2TRAUIRL7736M2TR1DirectFET Power MOSFET Logic LevelV(BR)DSS40V Advanced Process Technology Optimized for Automotive DC-DC, Motor Drive andRDS(on) typ.2.2m other Heavy Load Applicationsmax. 3.0m Exceptionally Small Footprint and Low Profile High Power DensityID (Silicon Limited)112A Low Parasitic

9.6. auirlu024z.pdf Size:260K _international_rectifier

AUIRL3705N
AUIRL3705N

PD - 97753AUTOMOTIVE GRADEAUIRLR024ZAUIRLU024ZFeaturesHEXFET Power MOSFET Logic Level Advanced Process Technology DV(BR)DSS55V Ultra Low On-ResistanceRDS(on) typ.46m 175C Operating TemperatureG Fast Switching max. 58m Repetitive Avalanche Allowed up to TjmaxSID16A Lead-Free, RoHS Compliant Automotive Qualified *DD

9.7. auirls3114z.pdf Size:238K _international_rectifier

AUIRL3705N
AUIRL3705N

PD - 96412AUTOMOTIVE GRADEAUIRLS3114ZHEXFET Power MOSFETFeaturesVDSS40VDl Advanced Process TechnologyRDS(on) typ.l Ultra Low On-Resistance 3.8ml Enhanced dV/dT and dI/dT capability max. 4.9ml 175C Operating TemperatureGl Fast Switching ID (Silicon Limited) 122Al Repetitive Avalanche Allowed up to TjmaxSID (Wirebond Limited)56A l Lead-Free, RoHS

9.8. auirll024z.pdf Size:228K _international_rectifier

AUIRL3705N
AUIRL3705N

PD - 97762AUTOMOTIVE GRADEAUIRLL024ZHEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS55V Ultra Low On-Resistance 150C Operating TemperatureRDS(on) typ.48m Fast SwitchingG max. 60m Repetitive Avalanche Allowed up toTjmax SID5.0A Lead-Free, RoHS Compliant Automotive Qualified *DescriptionDSpecifically de

9.9. auirlr3410trl.pdf Size:246K _international_rectifier

AUIRL3705N
AUIRL3705N

PD - 97491AUTOMOTIVE GRADEAUIRLR3410Features Advanced Planar TechnologyHEXFET Power MOSFET Low On-Resistance Dynamic dV/dT Rating DV(BR)DSS100V 175C Operating Temperature Fast SwitchingRDS(on) max.105mG Fully Avalanche Rated Repetitive Avalanche Allowed up toID17ASTjmax Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifica

9.10. auirlsl4030.pdf Size:264K _international_rectifier

AUIRL3705N
AUIRL3705N

PD - 96406BAUTOMOTIVE GRADEAUIRLS4030FeaturesAUIRLSL4030l Optimized for Logic Level DriveHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS100Vl 175C Operating TemperatureRDS(on) typ.l Fast Switching 3.4ml Repetitive Avalanche Allowed up to TjmaxG max. 4.3ml Lead-Free, RoHS Compliantl Automotive Qualified *ID 180A

9.11. auirlr2905ztr.pdf Size:273K _international_rectifier

AUIRL3705N
AUIRL3705N

PD - 97583AUTOMOTIVE GRADEAUIRLR2905ZFeaturesHEXFET Power MOSFET Logic Level Advanced Process TechnologyDV(BR)DSS 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) max.13.5m Fast SwitchingGID (Silicon Limited)60A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantSID (Package Limited) 42A Automot

9.12. auirl1404zstrl.pdf Size:375K _international_rectifier

AUIRL3705N
AUIRL3705N

PD - 96331AUTOMOTIVE GRADEAUIRL1404ZAUIRL1404ZSAUIRL1404ZLFeaturesHEXFET Power MOSFETl Logic Levell Advanced Process TechnologyV(BR)DSS 40VDl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ.2.5ml Fast Switching max. 3.1ml Repetitive Avalanche Allowed up to TjmaxGl Lead-Free, RoHS Compliant ID (Silicon Limited) 180A l Automotive Qu

9.13. auirlr2703tr.pdf Size:276K _international_rectifier

AUIRL3705N
AUIRL3705N

PD - 97620AUTOMOTIVE GRADEAUIRLR2703 Advanced Planar TechnologyHEXFET Power MOSFET Logic-Level Gate Drive Low On-ResistanceD Dynamic dV/dT Rating V(BR)DSS 30V 175C Operating TemperatureRDS(on) max.45m Fast SwitchingGID (Silicon Limited) Fully Avalanche Rated 23A Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)20

9.14. auirlr2905tr.pdf Size:238K _international_rectifier

AUIRL3705N
AUIRL3705N

AUIRLR2905AUTOMOTIVE GRADEAUIRLU2905 Advanced Planar TechnologyHEXFET Power MOSFET Logic-Level Gate DriveDV(BR)DSS Low On-Resistance 55V Dynamic dV/dT RatingRDS(on) max.27m 175C Operating Temperature G Fast SwitchingID42AS Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxD Lead-Free, RoHS Compliant Autom

9.15. auirlr3705ztr.pdf Size:287K _international_rectifier

AUIRL3705N
AUIRL3705N

PD - 97611AUTOMOTIVE GRADEAUIRLR3705ZFeaturesHEXFET Power MOSFET Logic Level Advanced Process TechnologyDV(BR)DSS 55V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max.8.0m Fast SwitchingGID (Silicon Limited)89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant SID (Package Limited)42A Automotiv

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