AUIRLR3105 MOSFET Datasheet: N-Ch, 55V, 25A. Full specification with pinout and replacement list

AUIRLR3105 Specs and Replacement

Type Designator: AUIRLR3105

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 57 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 57 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm

Package: DPAK

AUIRLR3105 substitution

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AUIRLR3105 datasheet

..1. Size:619K international rectifier
auirlr3105.pdf pdf_icon

PD - 97703A AUTOMOTIVE GRADE AUIRLR3105 Features HEXFET Power MOSFET l Advanced Planar Technology l Logic-Level Gate Drive D V(BR)DSS 55V Dynamic dV/dT Rating l Low On-Resistance RDS(on) typ. 30m l 175 C Operating Temperature G max 37m l Fast Switching l Fully Avalanche Rated S ID 25A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l A... See More ⇒

6.1. Size:714K infineon
auirlr3110z auirlu3110z.pdf pdf_icon

AUIRLR3110Z AUTOMOTIVE GRADE AUIRLU3110Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Logic Level Gate Drive max. 14m 175 C Operating Temperature ID (Silicon Limited) 63A Fast Switching ID (Package Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lea... See More ⇒

6.2. Size:706K infineon
auirlr3114z auirlu3114z.pdf pdf_icon

AUIRLR3114Z AUTOMOTIVE GRADE AUIRLU3114Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance Logic Level Gate Drive RDS(on) typ. 4.9m 175 C Operating Temperature max. 6.5m Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A L... See More ⇒

7.1. Size:246K international rectifier
auirlr3410trl.pdf pdf_icon

PD - 97491 AUTOMOTIVE GRADE AUIRLR3410 Features Advanced Planar Technology HEXFET Power MOSFET Low On-Resistance Dynamic dV/dT Rating D V(BR)DSS 100V 175 C Operating Temperature Fast Switching RDS(on) max. 105m G Fully Avalanche Rated Repetitive Avalanche Allowed up to ID 17A S Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifica... See More ⇒