AUIRLR3915
MOSFET. Datasheet pdf. Equivalent
Type Designator: AUIRLR3915
Marking Code: AULR3915
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 120
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 61
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 61
nC
trⓘ - Rise Time: 51
nS
Cossⓘ -
Output Capacitance: 390
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014
Ohm
Package:
DPAK
AUIRLR3915
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AUIRLR3915
Datasheet (PDF)
..1. Size:228K international rectifier
auirlr3915.pdf
PD - 97743AUTOMOTIVE GRADEAUIRLR3915FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Logic-Level Gate DriveDV(BR)DSS55Vl Low On-ResistanceRDS(on) typ.12ml 175C Operating Temperaturel Fast Switchingmax 14mGl Fully Avalanche RatedID (Silicon Limited)61Al Repetitive Avalanche AllowedSup to Tjmax ID (Package Limited)30Al Lead-Free, R
7.1. Size:246K international rectifier
auirlr3410trl.pdf
PD - 97491AUTOMOTIVE GRADEAUIRLR3410Features Advanced Planar TechnologyHEXFET Power MOSFET Low On-Resistance Dynamic dV/dT Rating DV(BR)DSS100V 175C Operating Temperature Fast SwitchingRDS(on) max.105mG Fully Avalanche Rated Repetitive Avalanche Allowed up toID17ASTjmax Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifica
7.2. Size:287K international rectifier
auirlr3705ztr.pdf
PD - 97611AUTOMOTIVE GRADEAUIRLR3705ZFeaturesHEXFET Power MOSFET Logic Level Advanced Process TechnologyDV(BR)DSS 55V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max.8.0m Fast SwitchingGID (Silicon Limited)89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant SID (Package Limited)42A Automotiv
7.3. Size:619K international rectifier
auirlr3105.pdf
PD - 97703AAUTOMOTIVE GRADEAUIRLR3105FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Logic-Level Gate DriveDV(BR)DSS55V Dynamic dV/dT Ratingl Low On-ResistanceRDS(on) typ.30ml 175C Operating TemperatureG max 37ml Fast Switchingl Fully Avalanche RatedSID25Al Repetitive Avalanche Allowedup to Tjmaxl Lead-Free, RoHS CompliantDl A
7.4. Size:636K infineon
auirlr3636.pdf
AUTOMOTIVE GRADE AUIRLR3636 Features HEXFET Power MOSFET Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 5.4m Logic Level Gate Drive max. 6.8m 175C Operating Temperature ID (Silicon Limited) 99A Fast Switching ID (Package Limited) 50A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS C
7.5. Size:555K infineon
auirlr3410.pdf
AUTOMOTIVE GRADE AUIRLR3410 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 100V Logic Level Gate Drive Dynamic dV/dT Rating RDS(on) max. 105m 175C Operating Temperature Fast Switching ID 17A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D
7.6. Size:714K infineon
auirlr3110z auirlu3110z.pdf
AUIRLR3110Z AUTOMOTIVE GRADE AUIRLU3110Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Logic Level Gate Drive max. 14m 175C Operating Temperature ID (Silicon Limited) 63A Fast Switching ID (Package Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lea
7.7. Size:706K infineon
auirlr3114z auirlu3114z.pdf
AUIRLR3114Z AUTOMOTIVE GRADE AUIRLU3114Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance Logic Level Gate Drive RDS(on) typ. 4.9m 175C Operating Temperature max. 6.5m Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A L
7.8. Size:670K infineon
auirlr3705z.pdf
AUTOMOTIVE GRADE AUIRLR3705Z Features HEXFET Power MOSFET Advanced Process Technology Logic-Level VDSS 55V Ultra Low On-Resistance RDS(on) max. 8.0m 175C Operating Temperature Fast Switching ID (Silicon Limited) 89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 42A Automotive Quali
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