BSN254A Datasheet and Replacement
Type Designator: BSN254A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 0.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 20 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO92
- MOSFET Cross-Reference Search
BSN254A Datasheet (PDF)
bsn254 bsn254a cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBSN254BSN254AN-channel enhancement modevertical D-MOS transistorsApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode vertical BSN254D-MOS transistors BSN254ADESCRIPTION QUICK REFERENCE DATAN-channel enhancement modeDrain-source voltage VDS max.
bsn254.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBSN254BSN254AN-channel enhancement modevertical D-MOS transistorsApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode vertical BSN254D-MOS transistors BSN254ADESCRIPTION QUICK REFERENCE DATAN-channel enhancement modeDrain-source voltage VDS max.
Datasheet: BS108 , BS170 , BS170F , BS170P , BS250F , BS250P , BS270 , BSN254 , P60NF06 , BSP92 , BSR56 , BSR57 , BSR58 , BSS100 , BSS110 , BSS123 , BSS123A .
History: 2SJ473-01S | IRF7759L2TR1PBF
Keywords - BSN254A MOSFET datasheet
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History: 2SJ473-01S | IRF7759L2TR1PBF
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