All MOSFET. IRF7314Q Datasheet

 

IRF7314Q Datasheet and Replacement


   Type Designator: IRF7314Q
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7 V
   |Id| ⓘ - Maximum Drain Current: 5.2 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 19 nC
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 512 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: SO8
 

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IRF7314Q Datasheet (PDF)

 ..1. Size:148K  international rectifier
 irf7314q.pdf pdf_icon

IRF7314Q

PD -93945AIRF7314QHEXFET Power MOSFETTypical ApplicationsVDSS RDS(on) max ID Anti-lock Braking Systems (ABS) -20V 0.058@VGS = -4.5V -5.2A Electronic Fuel Injection0.098@VGS = -2.7V -4.42A Air bagBenefits Advanced Process Technology Dual P-Channel MOSFET1 8S1 D1 Ultra Low On-Resistance2 7G1 D1 175C Operating Temperature3 6S2 D2

 7.1. Size:147K  international rectifier
 irf7314.pdf pdf_icon

IRF7314Q

PD - 9.1436BIRF7314PRELIMINARYHEXFET Power MOSFET Generation V Technology1 8S1 D1 Ultra Low On-ResistanceVDSS = -20V2 7 Dual P-Channel MOSFETG1 D1 Surface Mount3 6S2 D2 Fully Avalanche Rated45G2 D2RDS(on) = 0.058Top ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l

 7.2. Size:195K  international rectifier
 irf7314pbf.pdf pdf_icon

IRF7314Q

PD - 95181IRF7314PbFHEXFET Power MOSFETl Generation V Technology1 8S1 D1l Ultra Low On-ResistanceVDSS = -20V2 7l Dual P-Channel MOSFETG1 D1l Surface Mount3 6S2 D2l Fully Avalanche Rated4 5G2 D2l Lead-Free RDS(on) = 0.058Top ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextreme

 7.3. Size:909K  cn vbsemi
 irf7314trpbf.pdf pdf_icon

IRF7314Q

IRF7314TRPBFwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top

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Datasheet: IRF7910 , IRF7380Q , IRF7341 , IRF7503 , IRF8852 , IRF7103I , IRF7304Q , IRF7756G , IRFZ24N , IRF7329 , IRF7316Q , IRF7306 , IRF7324 , IRF7750G , IRF9358 , IRF5810 , IRF7750 .

History: RF1S640SM | STH185N10F3-6

Keywords - IRF7314Q MOSFET datasheet

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