IRF7750G Datasheet. Specs and Replacement

Type Designator: IRF7750G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 54 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TSSOP8

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IRF7750G substitution

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IRF7750G datasheet

 ..1. Size:226K  1
irf7750g.pdf pdf_icon

IRF7750G

PD-96144A IRF7750GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package VDSS = -20V l Low Profile ( ... See More ⇒

 7.1. Size:110K  international rectifier
irf7750.pdf pdf_icon

IRF7750G

PD - 93848A IRF7750 HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET VDSS = -20V Very Small SOIC Package Low Profile ( ... See More ⇒

 8.1. Size:228K  1
irf7752g.pdf pdf_icon

IRF7750G

PD- 96151A IRF7752GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l Dual N-Channel MOSFET VDSS RDS(on) max ID l Very Small SOIC Package 30V 0.030@VGS = 10V 4.6A l Low Profile (... See More ⇒

 8.2. Size:311K  international rectifier
irf7759l2tr1pbf irf7759l2trpbf.pdf pdf_icon

IRF7750G

PD - 96283 IRF7759L2TRPbF IRF7759L2TR1PbF DirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified) l Lead-Free (Qualified up to 260 C Reflow) l Ideal for High Performance Isolated Converter VDSS VGS RDS(on) Primary Switch Socket 75V min 20V max 1.8m @ 10V l Optimized for Synchronous Rectification Qg tot Qgd Vgs(th) l Low Cond... See More ⇒

Detailed specifications: IRF7103I, IRF7304Q, IRF7756G, IRF7314Q, IRF7329, IRF7316Q, IRF7306, IRF7324, IRF1407, IRF9358, IRF5810, IRF7750, IRF9362, IRF7755G, IRF7306Q, IRF7342, IRF7304

Keywords - IRF7750G MOSFET specs

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