All MOSFET. 2N6795 Datasheet

 

2N6795 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N6795

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 900 pF

Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm

Package: TO205AF

2N6795 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N6795 Datasheet (PDF)

5.1. 2n6798u.pdf Size:175K _update-mosfet

2N6795
2N6795

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS JAN 2N6798 2N6798U JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain – Source Voltag

5.2. 2n6792u.pdf Size:373K _update-mosfet

2N6795
2N6795

PD - 93985A IRFE320 JANTX2N6792U REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6792U HEXFET®TRANSISTORS REF:MIL-PRF-19500/555 SURFACE MOUNT (LCC-18) 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFE320 400V 1.8Ω 1.8A LCC-18 The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface Features: mount technology.

 5.3. 2n6796lcc4.pdf Size:15K _update-mosfet

2N6795
2N6795

2N6796LCC4 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL 9.14 (0.360) 1.27 (0.050) 8.64 (0.340) POWER MOSFET 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 17 10 18 7.62 (0.300) VDSS = 100V 7.12 (0.280) 9 1 0.76 (0.030) 8 2 0.51 (0.020) ID = 7.4A 0.33 (0.013) Ω Rad. RDS(ON) = 0.18Ω 0.08 (0.003) 7 6 5 4 3 0.43 (0.017) Rad. 1.39 (0.05

5.4. 2n6796u.pdf Size:177K _update-mosfet

2N6795
2N6795

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6796 2N6796U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C un

 5.5. 2n6790u.pdf Size:191K _update-mosfet

2N6795
2N6795

PD - 93984A REPETITIVE AVALANCHE AND dv/dt RATED IRFE220 HEXFET®TRANSISTORS JANTX2N6790U SURFACE MOUNT (LCC-18) REF:MIL-PRF-19500/555 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFE220 100V 0.80Ω 2.8A LCC-18 The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface Features: mount technology. Desinged t

5.6. 2n6794u.pdf Size:230K _update-mosfet

2N6795
2N6795

PD - 93986A IRFE420 JANTX2N6794U REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6794U HEXFET®TRANSISTORS REF:MIL-PRF-19500/555 SURFACE MOUNT (LCC-18) 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFE420 500V 3.0Ω 1.4A LCC-18 The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface Features: mount technology.

5.7. 2n6790.pdf Size:86K _fairchild_semi

2N6795
2N6795

2N6790 Data Sheet December 2001 3.5A, 200V, 0.800 Ohm, N-Channel Power Features MOSFET • 3.5A, 200V The 2N6790 is an N-Channel enhancement mode silicon • rDS(ON) = 0.800Ω gate power MOS field effect transistor designed for • SOA is Power Dissipation Limited applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high

5.8. 2n6792 irff320.pdf Size:131K _international_rectifier

2N6795
2N6795

PD -90428C IRFF320 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6792 HEXFETTRANSISTORS JANTXV2N6792 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF320 400V 1.8Ω 2.0A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing

5.9. 2n6790 irff220.pdf Size:133K _international_rectifier

2N6795
2N6795

PD - 90427C IRFF220 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6790 HEXFETTRANSISTORS JANTXV2N6790 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF220 200V 0.80Ω 3.5A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processin

5.10. 2n6792u.pdf Size:373K _international_rectifier

2N6795
2N6795

PD - 93985A IRFE320 JANTX2N6792U REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6792U HEXFET®TRANSISTORS REF:MIL-PRF-19500/555 SURFACE MOUNT (LCC-18) 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFE320 400V 1.8Ω 1.8A LCC-18 The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface Features: mount technology.

5.11. 2n6798 irff230.pdf Size:131K _international_rectifier

2N6795
2N6795

PD -90431C IRFF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6798 HEXFETTRANSISTORS JANTXV2N6798 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF230 200V 0.40Ω 5.5A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing

5.12. irff1xx irff2xx irff3xx irff4xx 2n678x 2n679x 2n680x.pdf Size:99K _international_rectifier

2N6795



5.13. 2n6794 irff420.pdf Size:128K _international_rectifier

2N6795
2N6795

PD - 90429C IRFF420 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6794 HEXFETTRANSISTORS JANTXV2N6794 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF420 500V 3.0Ω 1.5A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing

5.14. 2n6796u irfe130.pdf Size:145K _international_rectifier

2N6795
2N6795

Provisional Data Sheet No. PD - 9.1666A IRFE130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6796U HEXFET® TRANSISTOR JANTXV2N6796U [REF:MIL-PRF-19500/557] N-CHANNEL Ω 100Volt, 0.18Ω Product Summary Ω, HEXFET Ω Ω The leadless chip carrier (LCC) package represents Part Number BVDSS RDS(on) ID the logical next step in the continual evolution of IRFE130 100V 0.18Ω 8.0A

5.15. 2n6790u.pdf Size:191K _international_rectifier

2N6795
2N6795

PD - 93984A REPETITIVE AVALANCHE AND dv/dt RATED IRFE220 HEXFET®TRANSISTORS JANTX2N6790U SURFACE MOUNT (LCC-18) REF:MIL-PRF-19500/555 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFE220 100V 0.80Ω 2.8A LCC-18 The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface Features: mount technology. Desinged t

5.16. 2n6794u.pdf Size:230K _international_rectifier

2N6795
2N6795

PD - 93986A IRFE420 JANTX2N6794U REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6794U HEXFET®TRANSISTORS REF:MIL-PRF-19500/555 SURFACE MOUNT (LCC-18) 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFE420 500V 3.0Ω 1.4A LCC-18 The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface Features: mount technology.

5.17. 2n6796 2n6798 2n6800 2n6802.pdf Size:66K _omnirel

2N6795
2N6795

2N6796, JANTX2N6796 JANTXV2N6796 2N6800, JANTX2N6800, JANTXV2N6800 2N6798, JANTX2N6798 JANTXV2N6798 2N6802, JANTX2N6802, JANTXV2N6802 JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES •Low RDS(on) •Ease of Paralleling •Qualified to MIL-PRF-19500/557 DESCRIPTIO

5.18. 2n6796lcc4.pdf Size:15K _semelab

2N6795
2N6795

2N6796LCC4 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL 9.14 (0.360) 1.27 (0.050) 8.64 (0.340) POWER MOSFET 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 17 10 18 7.62 (0.300) VDSS = 100V 7.12 (0.280) 9 1 0.76 (0.030) 8 2 0.51 (0.020) ID = 7.4A 0.33 (0.013) Ω Rad. RDS(ON) = 0.18Ω 0.08 (0.003) 7 6 5 4 3 0.43 (0.017) Rad. 1.39 (0.05

5.19. 2n6794.pdf Size:23K _semelab

2N6795
2N6795

2N6794 SEME LAB MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET BVDSS 500V ID(cont) 1.5 RDS(on) 3.0 FEATURES ! • AVALANCHE ENERGY RATED

5.20. 2n6796.pdf Size:18K _semelab

2N6795
2N6795

2N6796 MECHANICAL DATA Dimensions in mm (inches) TMOS FET TRANSISTOR N – CHANNEL FEATURES • VDSS = 100V • ID = 8A ! Ω • RDSON = 0.18Ω

5.21. 2n6798.pdf Size:21K _semelab

2N6795
2N6795

2N6798 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL ENHANCEMENT MODE TRANSISTOR FEATURES • V(BR)DSS = 200V • ID = 5.5A ! • RDSON = 0.40

5.22. 2n6798u.pdf Size:175K _microsemi

2N6795
2N6795

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS JAN 2N6798 2N6798U JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain – Source Voltag

5.23. 2n6796u.pdf Size:177K _microsemi

2N6795
2N6795

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6796 2N6796U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C un

Datasheet: 2N6793 , 2N6793LCC4 , 2N6793-SM , 2N6794 , 2N6794JANT , 2N6794JANTX , 2N6794JANTXV , 2N6794SM , IRF4905 , 2N6795-SM , 2N6796 , 2N6796JANTX , 2N6796JANTXV , 2N6796SM , 2N6797 , 2N6797LCC4 , 2N6797-SM .

 

 
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