AUIRF7342Q
MOSFET. Datasheet pdf. Equivalent
Type Designator: AUIRF7342Q
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 3.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 26
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 210
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105
Ohm
Package:
SO8
AUIRF7342Q
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AUIRF7342Q
Datasheet (PDF)
..1. Size:172K 1
auirf7342q.pdf
PD - 97640AUTOMOTIVE GRADEAUIRF7342Q Advanced Planar Technology Low On-Resistance HEXFET Power MOSFET Dual P-Channel MOSFET Dynamic dV/dT Rating 1 8S1 D1V(BR)DSS-55V 150C Operating Temperature 2 7G1 D1 Fast Switching 3 6S2 D2RDS(on) max.0.105 Fully Avalanche Rated 4 5G2 D2 Lead-Free, RoHS CompliantID-3.4ATop View Autom
..2. Size:267K infineon
auirf7342q.pdf
AUTOMOTIVE GRADE AUIRF7342Q VDSS 1 8S1 D1Features -55V 2 7G1 D1 Advanced Planar Technology 3 6RDS(on) max. S2 D2 Low On-Resistance 0.1054 5G2 D2 Logic Level Gate Drive ID -3.4A Dual P Channel MOSFET Top View Dynamic dv/dt Rating 150C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free, RoHS
6.1. Size:403K 1
auirf7341q.pdf
AUTOMOTIVE GRADE AUIRF7341Q VDSS Features 1 8 55V S1 D1 Advanced Planar Technology 2 7G1 D1RDS(on) typ. 0.0433 6 Ultra Low On-Resistance S2 D24 5 max. Logic Level Gate Drive G2 D20.050 Dual N Channel MOSFET Top View ID 5.1A Surface Mount Available in Tape & Reel 175C Operating Temperature Lead-Free, RoHS Co
6.2. Size:225K 1
auirf7343q.pdf
PD - 96343BAUTOMOTIVE MOSFETAUIRF7343QHEXFET Power MOSFETFeaturesl Advanced Planar TechnologyN-Ch P-ChN-CHANNEL MOSFET1 8l Ultra Low On-ResistanceS1 D1l Dual N and P Channel MOSFETV(BR)DSS55V -55V2 7G1 D1l Surface Mount3 6l Available in Tape & ReelS2 D2RDS(on) typ.0.043 0.095l 150C Operating Temperature45G2 D2l Automotive [Q101] Qualif
6.3. Size:421K infineon
auirf7341q.pdf
AUTOMOTIVE GRADE AUIRF7341Q VDSS Features 1 8 55V S1 D1 Advanced Planar Technology 2 7G1 D1RDS(on) typ. 0.0433 6 Ultra Low On-Resistance S2 D24 5 max. Logic Level Gate Drive G2 D20.050 Dual N Channel MOSFET Top View ID 5.1A Surface Mount Available in Tape & Reel 175C Operating Temperature Lead-Free, RoHS Co
6.4. Size:323K infineon
auirf7343q.pdf
AUTOMOTIVE GRADE AUIRF7343Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1VDSS 55V -55V Ultra Low On-Resistance 2 7G1 D1 Logic Level Gate Drive RDS(on) typ. 0.043 0.0953 6S2 D2 Dual N and P Channel MOSFET max. 0.050 0.10545G2 D2 Surface Mount P-CHANNEL MOSFETID 4.7A -3.4A Availabl
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