2SJ345 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ345
Marking Code: KS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 7 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 0.05 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 8.4 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 40 Ohm
Package: SOT346 SC59 SMINI
2SJ345 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ345 Datasheet (PDF)
2sj345.pdf
2SJ345 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ345 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.5~-1.5 V High speed Small package Complementary to 2SK1828 Marking Equivalent CircuitMaximum Ratings (Ta == 25C) ==JEDEC TO-236MODJEITA SC-59Characteristics Symbol Ratin
2sj346.pdf
2SJ346 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ346 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.5~-1.5 V High speed Small package Complementary to 2SK1829 Marking Equivalent CircuitMaximum Ratings (Ta == 25C) ==JEDEC Characteristics Symbol Rating UnitJEITA SC-7
2sj342.pdf
2SJ342 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ342 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.8~-2.5 V High speed Enhancement-mode Small package Complementary to 2SK1825 Equivalent Circuit Maximum Ratings (Ta == 25C) ==JEDEC Characteristics Symbol Rating
2sj347.pdf
2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.5~-1.5 V High speed Small package Complementary to 2SK1830 Marking Equivalent CircuitMaximum Ratings (Ta = = 25C) ==JEDEC Characteristics Symbol Rating UnitJEITA
2sj349.pdf
2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ349 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON-resistance : RDS (ON) = 33 m (typ.) High forward transfer admittance : |Yfs| = 20 S (typ.) Low leakage current : IDSS = -100 A (max) (VDS = -60 V) Enhancement mode: Vth = -0.
2sj344.pdf
2SJ344 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ344 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.8~-2.5 V High speed Enhancement-mode Small package Complementary to 2SK1827 Marking Equivalent CircuitJEDEC Maximum Ratings (Ta == 25C) ==JEITA SC-70Characteri
2sj343.pdf
2SJ343 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ343 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.8~-2.5 V High speed Enhancement-mode Small package Complementary to 2SK1826 Marking Equivalent CircuitMaximum Ratings (Ta = JEDEC TO-236MOD= 25C) ==JEITA SC-59Charac
2sj340.pdf
Ordering number:ENN6420P-Channel Silicon MOSFET2SJ340Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2093A 4V drive.[2SJ340] Enables simplified fabrication, high-density mount-4.510.21.3ing, and miniaturization in end products due to thesurface mountable package.1.20.80.41 2
2sj348.pdf
Ordering number:ENN6421P-Channel Silicon MOSFET2SJ348Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2052C 4V drive.[2SJ348]10.24.53.65.11.31.20.80.41 : Gate1 2 32 : Drain3 : Source2.55 2.55SANYO : TO-220SpecificationsAbsolute Maximum Ratings at Ta = 25CParamete
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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