All MOSFET. BUK101-50DL Datasheet

 

BUK101-50DL MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK101-50DL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 75 W
   Maximum Drain-Source Voltage |Vds|: 50 V
   Maximum Drain Current |Id|: 13 A
   Maximum Junction Temperature (Tj): 150 °C
   Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm
   Package: TO220AB

 BUK101-50DL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK101-50DL Datasheet (PDF)

 ..1. Size:72K  philips
buk101-50dl 1.pdf

BUK101-50DL BUK101-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK101-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 26 Apurpose switch for automotive PD T

 5.1. Size:87K  philips
buk101-50gs.pdf

BUK101-50DL BUK101-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK101-50GS TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected power MOSFETin a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 Vas a general purpose switch for ID Continuous drain current 29 Aautomotive systems and other PD Total p

 5.2. Size:84K  philips
buk101-50gl.pdf

BUK101-50DL BUK101-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK101-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 26 Apurpose switch for automotive PD T

 9.1. Size:72K  philips
buk108-50dl 1.pdf

BUK101-50DL BUK101-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK108-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 Vmount envelope, intended as a ID Continuous drain current 13.5 Ageneral purpose switch for

 9.2. Size:63K  philips
buk107-50dl 1.pdf

BUK101-50DL BUK101-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK107-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic overload protected logic SYMBOL PARAMETER MAX. UNITlevel power MOSFET in a surfacemount plastic envelope, intended as VDS Continuous drain source voltage 50 Va general purpose switch forautomotive systems and other ID Continuous drain current

 9.3. Size:84K  philips
buk102-50gl 1.pdf

BUK101-50DL BUK101-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK102-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 45 Apurpose switch for automotive PD T

 9.4. Size:90K  philips
buk107 50ds hg 2.pdf

BUK101-50DL BUK101-50DL

DISCRETE SEMICONDUCTORSDATA SHEETBUK107-50DSPowerMOS transistorLogic level TOPFETMarch 1997Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC13aPhilips Semiconductors Product specificationPowerMOS transistorBUK107-50DSLogic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic overload protected logic SYMBOL PARAMETER MAX.

 9.5. Size:68K  philips
buk100-50dl 1.pdf

BUK101-50DL BUK101-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK100-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 13.5 Apurpose switch for automotive PD

 9.6. Size:93K  philips
buk108-50gs 1.pdf

BUK101-50DL BUK101-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK108-50GS TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected power MOSFETin a 3 pin plastic surface mount VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 15 Apurpose switch for automotive PD Total power

 9.7. Size:92K  philips
buk109-50gs 1.pdf

BUK101-50DL BUK101-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK109-50GS TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected power MOSFETin a 3 pin plastic surface mount VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 29 Apurpose switch for automotive PD Total power

 9.8. Size:86K  philips
buk102-50gs 1.pdf

BUK101-50DL BUK101-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK102-50GS TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected power MOSFETin a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 Vas a general purpose switch for ID Continuous drain current 50 Aautomotive systems and other PD Total p

 9.9. Size:62K  philips
buk107-50ds 1.pdf

BUK101-50DL BUK101-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK107-50DS Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic overload protected logic SYMBOL PARAMETER MAX. UNITlevel power MOSFET in a surfacemount plastic envelope, intended as VDS Continuous drain source voltage 50 Va general purpose switch forautomotive systems and other ID Continuous drain current

 9.10. Size:75K  philips
buk109-50dl 1.pdf

BUK101-50DL BUK101-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK109-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 Vmount envelope, intended as a ID Continuous drain current 26 Ageneral purpose switch for P

 9.11. Size:101K  philips
buk108-50gl 1.pdf

BUK101-50DL BUK101-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK108-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 Vmount envelope, intended as a ID Continuous drain current 13.5 Ageneral purpose switch for

 9.12. Size:64K  philips
buk107-50gl 1.pdf

BUK101-50DL BUK101-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK107-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic overload protected logic SYMBOL PARAMETER MAX. UNITlevel power MOSFET in a surfacemount plastic envelope, intended as VDS Continuous drain source voltage 50 Va general purpose switch forautomotive systems and other ID Continuous drain current

 9.13. Size:92K  philips
buk107 50dl hg 2.pdf

BUK101-50DL BUK101-50DL

DISCRETE SEMICONDUCTORSDATA SHEETBUK107-50DLPowerMOS transistorLogic level TOPFETMarch 1997Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC13aPhilips Semiconductors Product specificationPowerMOS transistorBUK107-50DLLogic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic overload protected logic SYMBOL PARAMETER MAX.

 9.14. Size:116K  philips
buk104-50l-s 50lp-sp 1.pdf

BUK101-50DL BUK101-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK104-50L/S Logic level TOPFET BUK104-50LP/SP DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 15 Apurpose switch fo

 9.15. Size:87K  philips
buk109-50gl 1.pdf

BUK101-50DL BUK101-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK109-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 Vmount envelope, intended as a ID Continuous drain current 26 Ageneral purpose switch for P

 9.16. Size:69K  philips
buk102-50dl 1.pdf

BUK101-50DL BUK101-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK102-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 45 Apurpose switch for automotive PD T

 9.17. Size:112K  philips
buk106-50l-s 50lp-sp 1.pdf

BUK101-50DL BUK101-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK106-50L/S Logic level TOPFET BUK106-50LP/SP DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 50 Apurpose switch fo

 9.18. Size:152K  philips
buk104-50s.pdf

BUK101-50DL BUK101-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK104-50L/S Logic level TOPFET BUK104-50LP/SP DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 15 Apurpose switch fo

 9.19. Size:98K  philips
buk100-50gl.pdf

BUK101-50DL BUK101-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK100-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 13.5 Apurpose switch for automotive PD

 9.20. Size:88K  philips
buk100-50gs 1.pdf

BUK101-50DL BUK101-50DL

Philips Semiconductors Product specification PowerMOS transistor BUK100-50GS TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected power MOSFETin a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 Vas a general purpose switch for ID Continuous drain current 15 Aautomotive systems and other PD Total p

Datasheet: BSS100 , BSS110 , BSS123 , BSS123A , BSS138 , BSS84 , BUK100-50DL , BUK100-50GS , AO3401 , BUK101-50GL , BUK101-50GS , BUK102-50DL , BUK102-50GL , BUK102-50GS , BUK104-50L , BUK104-50LP , BUK104-50SP .

 

 
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