2SK1826 PDF and Equivalents Search

 

2SK1826 Specs and Replacement

Type Designator: 2SK1826

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.05 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 5.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm

Package: SOT346 SC59 SMINI

2SK1826 substitution

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2SK1826 datasheet

 ..1. Size:319K  toshiba
2sk1826.pdf pdf_icon

2SK1826

2SK1826 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1826 High Speed Switching Applications Unit mm Analog Switch Applications 4 V gate drive Low threshold voltage V = 0.8 2.5 V th High speed Enhancement-mode Small package Marking Equivalent Circuit JEDEC TO-236MOD Maximum Ratings (Ta = = 25 C) = = JEITA SC-59 Characteristi... See More ⇒

 8.1. Size:60K  1
2sk1824.pdf pdf_icon

2SK1826

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1824 N-CHANNEL MOS FET FOR SWITCHING The 2SK1824 is a N-channel vertical type MOS FET that is PACKAGE DIMENSIONS (in mm) driven at 2.5 V. 0.3 0.05 0.1+0.1 0.05 Because this MOS FET can be driven on a low voltage and because it is not necessary to consider the drive current, the 2SK1824 is ideal for driving the actuator of power-saving ... See More ⇒

 8.2. Size:294K  toshiba
2sk1827.pdf pdf_icon

2SK1826

2SK1827 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1827 High Speed Switching Applications Unit mm Analog Switch Applications 4 V gate drive Low threshold voltage V = 0.8 2.5 V th High speed Enhancement-mode Small package Marking Equivalent Circuit JEDEC Maximum Ratings (Ta = = 25 C) = = JEITA SC-70 Characteristics Sy... See More ⇒

 8.3. Size:294K  toshiba
2sk1825.pdf pdf_icon

2SK1826

2SK1825 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1825 High Speed Switching Applications Unit mm Analog Switch Applications 4 V gate drive Low threshold voltage V = 0.8 2.5 V th High speed Enhancement-mode Small package Equivalent Circuit JEDEC Maximum Ratings (Ta = = 25 C) = = JEITA Characteristics Symbol Rat... See More ⇒

Detailed specifications: 2SJ610, 2SJ668, 2SJ680, 2SJ681, 2SK1062, 2SK1359, 2SK1365, 2SK1489, 2N7002, 2SK1827, 2SK1828, 2SK1829, 2SK1830, 2SK2009, 2SK2033, 2SK2034, 2SK2035

Keywords - 2SK1826 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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