All MOSFET. 2SK1827 Datasheet

 

2SK1827 Datasheet and Replacement


   Type Designator: 2SK1827
   Marking Code: KH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 0.05 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 5.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
   Package: SOT323 SC70 USM
 

 2SK1827 substitution

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2SK1827 Datasheet (PDF)

 ..1. Size:294K  toshiba
2sk1827.pdf pdf_icon

2SK1827

2SK1827 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1827 High Speed Switching Applications Unit: mm Analog Switch Applications 4 V gate drive Low threshold voltage: V = 0.8~2.5 V th High speed Enhancement-mode Small package Marking Equivalent CircuitJEDEC Maximum Ratings (Ta == 25C) ==JEITA SC-70Characteristics Sy

 8.1. Size:60K  1
2sk1824.pdf pdf_icon

2SK1827

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1824N-CHANNEL MOS FETFOR SWITCHINGThe 2SK1824 is a N-channel vertical type MOS FET that isPACKAGE DIMENSIONS (in mm)driven at 2.5 V.0.3 0.05 0.1+0.10.05Because this MOS FET can be driven on a low voltage andbecause it is not necessary to consider the drive current, the2SK1824 is ideal for driving the actuator of power-saving

 8.2. Size:294K  toshiba
2sk1825.pdf pdf_icon

2SK1827

2SK1825 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1825 High Speed Switching Applications Unit: mm Analog Switch Applications 4 V gate drive Low threshold voltage: V = 0.8~2.5 V th High speed Enhancement-mode Small package Equivalent Circuit JEDEC Maximum Ratings (Ta == 25C) ==JEITA Characteristics Symbol Rat

 8.3. Size:318K  toshiba
2sk1828.pdf pdf_icon

2SK1827

2SK1828 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1828 High Speed Switching Applications Unit: mm Analog Switch Applications 2.5 V gate drive Low threshold voltage: V = 0.5~1.5 V th High speed Enhancement-mode Small package Marking Equivalent CircuitJEDEC TO-236MODJEITA SC-59TOSHIBA 2-3F1FWeight: 0.012 g (typ.) Maximum Ra

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Keywords - 2SK1827 MOSFET datasheet

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