2SK2035 Specs and Replacement
Type Designator: 2SK2035
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 0.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ -
Output Capacitance: 9.3 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
Package: SOT416
SC75
SSM
- MOSFET ⓘ Cross-Reference Search
2SK2035 datasheet
..1. Size:294K toshiba
2sk2035.pdf 
2SK2035 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2035 High Speed Switching Applications Unit mm Analog Switching Applications High input impedance. Low gate threshold voltage V = 0.5 1.5 V th Excellent switching times t = 0.16 s (typ.) on t = 0.15 s (typ.) off Small package Enhancement-mode Marking Equivalent Circuit M... See More ⇒
8.1. Size:325K toshiba
2sk2036.pdf
2SK2036 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2036 High Speed Switching Applications Unit mm Analog Switching Applications High input impedance. Low gate threshold voltage V = 0.5 1.5 V th Excellent switching times t = 0.28 s (typ.) on t = 0.34 s (typ.) off Small package Enhancement-mode Marking Equivalent Circuit J... See More ⇒
8.2. Size:198K toshiba
2sk2038.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
8.5. Size:398K toshiba
2sk2034.pdf
2SK2034 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2034 High Speed Switching Applications Unit mm Analog Switch Applications High input impedance. Low gate threshold voltage. V = 0.5 1.5 V th Excellent switching times t = 0.16 s (typ.) on t = 0.15 s (typ.) off Small package. Enhancement-mode Marking Equivalent Circuit JE... See More ⇒
8.6. Size:298K toshiba
2sk2037.pdf
2SK2037 TOSHIBA Field Effect Transistor Silicon N Channel Type 2SK2037 High Speed Switching Applications Unit mm Analog Switching Applications High input impedance. Low gate threshold voltage V = 0.5 1.5 V th Excellent switching times t = 0.28 s (typ.) on t = 0.34 s (typ.) off Small package. Enhancement-mode Marking Equivalent Circuit JEDE... See More ⇒
8.7. Size:295K toshiba
2sk2033.pdf
2SK2033 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2033 High Speed Switching Applications Unit mm Analog Switch Applications High input impedance. Low gate threshold voltage V = 0.5 1.5 V th Excellent switching times t = 0.16 s (typ.) on t = 0.15 s (typ.) off Small package. Enhancement-mode Marking Equivalent Circuit JED... See More ⇒
8.8. Size:31K panasonic
2sk2032.pdf
Power F-MOS FETs 2SK2032 2SK2032 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed EAS > 200mJ 15.0 0.3 5.0 0.2 VGSS= 30V guaranteed 11.0 0.2 3.2 High-speed switching tf= 90ns 3.2 0.1 No secondary breakdown Applications 2.0 0.2 2.0 0.1 Non-contact relay 1.1 0.1 0.6 0.2 Solenoid drive 5.45 0.3 Motor drive 10.9 ... See More ⇒
8.9. Size:1082K kexin
2sk2033-3.pdf
SMD Type MOSFET N-Channel MOSFET 2SK2033 SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 20V ID = 100mA 1 2 RDS(ON) 12 (VGS = 2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 Low threshold voltage Vth = 0.5 1.5 V 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Sou... See More ⇒
8.10. Size:830K kexin
2sk2033.pdf
SMD Type MOSFET N-Channel MOSFET 2SK2033 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 20V ID = 100mA 1 2 +0.1 RDS(ON) 12 (VGS = 2.5V) +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Low threshold voltage Vth = 0.5 1.5 V 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source ... See More ⇒
8.11. Size:219K inchange semiconductor
2sk2038.pdf
isc N-Channel MOSFET Transistor 2SK2038 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
8.12. Size:219K inchange semiconductor
2sk2039.pdf
isc N-Channel MOSFET Transistor 2SK2039 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
Detailed specifications: 2SK1826, 2SK1827, 2SK1828, 2SK1829, 2SK1830, 2SK2009, 2SK2033, 2SK2034, SPP20N60C3, 2SK2036, 2SK2037, 2SK2601, 2SK2602, 2SK2606, 2SK2607, 2SK2613, 2SK2615
Keywords - 2SK2035 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
