All MOSFET. 2SK2719 Datasheet

 

2SK2719 Datasheet and Replacement


   Type Designator: 2SK2719
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.3 Ohm
   Package: SC65 TO3P
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2SK2719 Datasheet (PDF)

 ..1. Size:325K  toshiba
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2SK2719

 8.1. Size:42K  1
 2sk2710.pdf pdf_icon

2SK2719

2SK2710External dimensions 2 ...... FM100Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 600 V I = 100A, V = 0V(BR) DSS D GSV 600 VDSSI 100 nA V = 30VGSS GSV 30 VGSSI 100 A V = 600V, V = 0VDSS DS GSI 12 ADV 2.0 3.0 4.0 V V = 10V, I = 1mATH DS DI 48

 8.2. Size:409K  toshiba
 2sk2717.pdf pdf_icon

2SK2719

2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2717 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 2.3 (typ.) (ON) High forward transfer admittance : |Y | = 4.4 S (typ.) fs Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1

 8.3. Size:411K  toshiba
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2SK2719

2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2718 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 5.6 (typ.) (ON) High forward transfer admittance : |Y | = 2.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1

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History: FQD4N25TM | 2SK3192

Keywords - 2SK2719 MOSFET datasheet

 2SK2719 cross reference
 2SK2719 equivalent finder
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