2SK2719 MOSFET Datasheet: N-Ch, 900V, 3A. Full specification with pinout and replacement list

2SK2719 Specs and Replacement

Type Designator: 2SK2719

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.3 Ohm

Package: SC65 TO3P

2SK2719 substitution

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2SK2719 datasheet

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2SK2710 External dimensions 2 ...... FM100 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 600 V I = 100 A, V = 0V (BR) DSS D GS V 600 V DSS I 100 nA V = 30V GSS GS V 30 V GSS I 100 A V = 600V, V = 0V DSS DS GS I 12 A D V 2.0 3.0 4.0 V V = 10V, I = 1mA TH DS D I 48... See More ⇒

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2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2717 DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 2.3 (typ.) (ON) High forward transfer admittance Y = 4.4 S (typ.) fs Low leakage current I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 10 V, I = 1 ... See More ⇒

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2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2718 DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 5.6 (typ.) (ON) High forward transfer admittance Y = 2.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 10 V, I = 1 ... See More ⇒