All MOSFET. 2SK2824 Datasheet

 

2SK2824 Datasheet and Replacement


   Type Designator: 2SK2824
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 0.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 12 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 28 Ohm
   Package: SOT323 SC70 USM
 

 2SK2824 substitution

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2SK2824 Datasheet (PDF)

 ..1. Size:304K  toshiba
2sk2824.pdf pdf_icon

2SK2824

2SK2824 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2824 For Portable Equipment Unit: mm High Speed Switch Applications Analog Switch Applications High input impedance 1.5 V gate drive Low gate threshold voltage: V = 0.5~1.0 V th Small package Marking Equivalent CircuitJEDEC Maximum Ratings (Ta == 25C) ==JEITA SC-70TO

 8.1. Size:44K  1
2sk2828.pdf pdf_icon

2SK2824

2SK2828Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-514 C (Z)4th. EditionFeb 1999Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DCDC converter Avalanche ratingsOutlineTO3PD21G1. Gate2. Drain12 (Flange)333. SourceS2SK2828Abs

 8.2. Size:904K  1
2sk2821.pdf pdf_icon

2SK2824

 8.3. Size:72K  1
2sk2827-01.pdf pdf_icon

2SK2824

FUJI POWER MOSFET2SK2827-01N-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(

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Keywords - 2SK2824 MOSFET datasheet

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