2SK2825 Datasheet and Replacement
Type Designator: 2SK2825
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 0.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Id| ⓘ - Maximum Drain Current: 0.1
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 12
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 28
Ohm
Package:
SOT416
SC75
SSM
-
MOSFET ⓘ Cross-Reference Search
2SK2825 Datasheet (PDF)
..1. Size:300K toshiba
2sk2825.pdf 
2SK2825 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2825 For Portable Equipment Unit: mm High Speed Switch Applications Analog Switch Applications High input impedance 1.5 V gate drive Low gate threshold voltage: V = 0.5~1.0 V th Small package Marking Equivalent CircuitMaximum Ratings (Ta == 25C) ==JEDEC JEITA Cha
8.1. Size:44K 1
2sk2828.pdf 
2SK2828Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-514 C (Z)4th. EditionFeb 1999Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DCDC converter Avalanche ratingsOutlineTO3PD21G1. Gate2. Drain12 (Flange)333. SourceS2SK2828Abs
8.3. Size:72K 1
2sk2827-01.pdf 
FUJI POWER MOSFET2SK2827-01N-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(
8.4. Size:80K 1
2sk2826.pdf 
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2826SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK2826 is N-Channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SK2826 TO-220AB2SK2826-S TO-262FEATURES2SK2826-ZJ TO-263 Super Low On-state ResistanceNote2SK2826-Z TO-220SMDRDS(on)
8.6. Size:325K toshiba
2sk2823.pdf 
2SK2823 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2823 For Portable Equipment Unit: mm High Speed Switch Applications Analog Switch Applications High input impedance 1.5 V gate drive Low gate threshold voltage: V = 0.5~1.0 V th Small package Marking Equivalent CircuitJEDEC TO-236MODMaximum Ratings (Ta == 25C) ==JEITA SC-5
8.7. Size:304K toshiba
2sk2824.pdf 
2SK2824 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2824 For Portable Equipment Unit: mm High Speed Switch Applications Analog Switch Applications High input impedance 1.5 V gate drive Low gate threshold voltage: V = 0.5~1.0 V th Small package Marking Equivalent CircuitJEDEC Maximum Ratings (Ta == 25C) ==JEITA SC-70TO
8.8. Size:286K inchange semiconductor
2sk2821.pdf 
isc N-Channel MOSFET Transistor 2SK2821FEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 10m(Max) @V =4VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr
8.9. Size:289K inchange semiconductor
2sk2827.pdf 
isc N-Channel MOSFET Transistor 2SK2827FEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.10. Size:280K inchange semiconductor
2sk2826.pdf 
isc N-Channel MOSFET Transistor 2SK2826FEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.11. Size:286K inchange semiconductor
2sk2820.pdf 
isc N-Channel MOSFET Transistor 2SK2820FEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max) @V =4VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr
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History: IRF624S
Keywords - 2SK2825 MOSFET datasheet
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