2SK2847 PDF Specs and Replacement
Type Designator: 2SK2847
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 85
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id| ⓘ - Maximum Drain Current: 8
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
tr ⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 190
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4
Ohm
Package:
TO3P
-
MOSFET ⓘ Cross-Reference Search
2SK2847 PDF Specs
..1. Size:411K toshiba
2sk2847.pdf 
2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2847 DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 1.1 (typ.) (ON) High forward transfer admittance Y = 7.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 10 V, I = 1 ... See More ⇒
..2. Size:274K inchange semiconductor
2sk2847.pdf 
isc N-Channel MOSFET Transistor 2SK2847 FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.4 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒
8.2. Size:417K toshiba
2sk2841.pdf 
2SK2841 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2841 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.4 (typ.) High forward transfer admittance Yfs = 8.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 400 V) Enhancement mode Vth = 2.0 to 4.0 V (VD... See More ⇒
8.3. Size:408K toshiba
2sk2846.pdf 
2SK2846 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2846 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 4.2 (typ.) (ON) High forward transfer admittance Y = 1.7 S (typ.) fs Low leakage current I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode Vth = 2.0 ... See More ⇒
8.4. Size:411K toshiba
2sk2845.pdf 
2SK2845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2845 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 8.0 (typ.) High forward transfer admittance Y = 0.9 S (typ.) fs Low leakage current I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V... See More ⇒
8.5. Size:425K toshiba
2sk2842.pdf 
2SK2842 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2842 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 0.4 (typ.) (ON) High forward transfer admittance Y = 9.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V ... See More ⇒
8.6. Size:426K toshiba
2sk2844.pdf 
2SK2844 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2844 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm 4 V gate drive Low drain-source ON resistance R = 16 m (typ.) DS (ON) High forward transfer admittance Y = 26 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 30 V) DS Enhancement-... See More ⇒
8.7. Size:411K toshiba
2sk2843.pdf 
2SK2843 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2843 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 0.54 (typ.) (ON) High forward transfer admittance Y = 9.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V... See More ⇒
8.8. Size:43K sanken-ele
2sk2848.pdf 
2SK2848 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 600 V I = 100 A, V = 0V (BR) DSS D GS V 600 V DSS I 100 nA V = 30V GSS GS V 30 V GSS I 100 A V = 600V, V = 0V DSS DS GS I 2A D V 2.0 3.0 4.0 V V = 10V, I = 250 A TH DS D I 8 ... See More ⇒
8.9. Size:289K inchange semiconductor
2sk2841.pdf 
isc N-Channel MOSFET Transistor 2SK2841 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒
8.10. Size:252K inchange semiconductor
2sk2848.pdf 
isc N-Channel MOSFET Transistor 2SK2848 FEATURES Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 2.8 (Max) 100% avalanche tested DS(on) Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose ... See More ⇒
8.11. Size:356K inchange semiconductor
2sk2849s.pdf 
isc N-Channel MOSFET Transistor 2SK2849S FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.18 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
8.12. Size:255K inchange semiconductor
2sk2842.pdf 
isc N-Channel MOSFET Transistor 2SK2842 FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒
8.13. Size:282K inchange semiconductor
2sk2849l.pdf 
isc N-Channel MOSFET Transistor 2SK2849L FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.18 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
8.14. Size:289K inchange semiconductor
2sk2844.pdf 
isc N-Channel MOSFET Transistor 2SK2844 FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒
8.15. Size:280K inchange semiconductor
2sk2843.pdf 
isc N-Channel MOSFET Transistor 2SK2843 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒
Detailed specifications: 2SK2607
, 2SK2613
, 2SK2615
, 2SK2699
, 2SK2719
, 2SK2823
, 2SK2824
, 2SK2825
, STP80NF70
, 2SK2865
, 2SK2917
, 2SK2953
, 2SK2962
, 2SK2963
, 2SK2964
, 2SK2968
, 2SK2989
.
History: SVD3205STR
Keywords - 2SK2847 MOSFET specs
2SK2847 cross reference
2SK2847 equivalent finder
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