2SK3473 PDF and Equivalents Search

2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIV) 2SK3473 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.3 (typ.) High forward transfer admittance Yfs = 6.5S (typ.) Low leakage current IDSS = 100 A (VDS = 720 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum ... See More ⇒

isc N-Channel MOSFET Transistor 2SK3473 FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.6 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

2SK3472 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS V) 2SK3472 Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 4.0 m (typ.) High forward transfer admittance Yfs = 0.8 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 450 V) Enhancement model Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abs... See More ⇒

2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Unit mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this ... See More ⇒

2SK3471 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3471 Switching Regulator and DC-DC Converter Applications Unit mm Low drain-source ON resistance RDS (ON) = 10 (typ.) High forward transfer admittance Yfs = 0.4 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement model Vth = 2.0 to 4.0 V (VDS = 10 V,... See More ⇒

2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this ... See More ⇒

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

FUJI POWER MOSFET200303 2SK3474-01 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications for Switching Foot Print Pattern Absolute Maximum Ratings at Tc=25 C ( unless otherwise specified) Item Symbol Ratings Unit Remarks Equivalent circuit schema... See More ⇒

isc N-Channel MOSFET Transistor 2SK3479-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 11m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒

isc N-Channel MOSFET Transistor 2SK3479 FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 11m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

isc N-Channel MOSFET Transistor 2SK3472 FEATURES Drain Current I = 1A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 4.6 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

isc N-Channel MOSFET Transistor 2SK3479-ZJ FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 11m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒

isc N-Channel MOSFET Transistor 2SK3479-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 11m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒