All MOSFET. 2SK3842 Datasheet

 

2SK3842 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3842

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 75 A

Total Gate Charge (Qg): 196 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0058 Ohm

Package: SC97, TFP

2SK3842 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3842 Datasheet (PDF)

1.1. 2sk3842.pdf Size:216K _toshiba

2SK3842
2SK3842

2SK3842 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3842 Switching Regulator Applications, DC-DC Converter and Unit: mm Motor Drive Applications • Low drain-source ON resistance: RDS (ON) =4.6 mΩ (typ.) • High forward transfer admittance: |Yfs| = 93 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) • Enhancement model: Vth

4.1. 2sk3844.pdf Size:228K _toshiba

2SK3842
2SK3842

2SK3844 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ) 2SK3844 Switching Regulator, DC-DC Converter Applications Unit: mm Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.1 mΩ (typ.) • High forward transfer admittance: |Yfs| = 63 S (typ.) • Low leakage current: IDSS = 100 μA (max)(VDS = 60 V) • Enhancement mode: Vth = 2.0

4.2. 2sk3846.pdf Size:182K _toshiba

2SK3842
2SK3842

2SK3846 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII) 2SK3846 Switching Regulator, DC/DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 12 mΩ (typ.) High forward transfer admittance : |Yfs| = 33 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 40 V) Enhancement mode : Vth = 1.5~2.5 V (VDS

 4.3. 2sk3847.pdf Size:997K _toshiba

2SK3842
2SK3842

2SK3847 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK3847 Switching Regulator, DC/DC Converter and Motor Drive Unit: mm Applications Low drain source ON resistance : RDS (ON) = 12 m (typ.) High forward transfer admittance : |Yfs| = 36 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 40 V) Enhancement mode : Vth = 1.5 to 2.5 V (VDS = 1

4.4. 2sk3845.pdf Size:231K _toshiba

2SK3842
2SK3842

2SK3845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3845 Switching Regulator, DC-DC Converter Applications and Unit: mm Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.7 mΩ (typ.) • High forward transfer admittance: |Yfs| = 88 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) • Enhancement model: Vt

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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