2SK3878 Datasheet. Specs and Replacement
The 2SK3878 is an N-channel enhancement-mode MOSFET designed for high-efficiency switching in power-conversion circuits. Built with low-on-resistance silicon technology, it supports fast switching speeds and reduced conduction losses, making it suitable for resonant converters, motor drives, high-frequency SMPS stages. The device typically features a high drain-source voltage rating, robust avalanche capability, low gate charge, enabling efficient operation in compact, thermally constrained designs.
Type Designator: 2SK3878 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 190 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: SC65
TO3P
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2SK3878 datasheet
..1. Size:227K toshiba
2sk3878.pdf 
2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( - MOSIV) 2SK3878 Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.0 (typ.) High forward transfer admittance Yfs = 7.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 720 V) Enhancement model Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) ... See More ⇒
..2. Size:216K inchange semiconductor
2sk3878.pdf
isc N-Channel Mosfet Transistor 2SK3878 FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.3 (Max) DS(on) Avalanche Energy Specified Fast Switching Simple Drive Requirements Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for a... See More ⇒
8.1. Size:292K toshiba
2sk3879.pdf
2SK3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSIV) 2SK3879 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.35 (typ.) High forward transfer admittance Yfs = 5.2 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 640 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolu... See More ⇒
8.2. Size:95K fuji
2sk3870-01.pdf
2SK3870-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C... See More ⇒
8.3. Size:153K fuji
2sk3872-01l-s-sj.pdf
2SK3872-01L,S,SJ N-CHANNEL SILICON POWER MOSFET 200406 Outline Drawings (mm) FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings ... See More ⇒
8.4. Size:96K fuji
2sk3871-01mr.pdf
2SK3871-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 ... See More ⇒
8.5. Size:101K fuji
2sk3875-01.pdf
2SK3875-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless other... See More ⇒
8.6. Size:100K fuji
2sk3876-01r.pdf
2SK3876-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless othe... See More ⇒
8.7. Size:109K fuji
2sk3874-01r.pdf
2SK3874-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless o... See More ⇒
8.8. Size:112K fuji
2sk3873-01.pdf
2SK3873-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless other... See More ⇒
8.9. Size:283K inchange semiconductor
2sk3872-01l.pdf
isc N-Channel MOSFET Transistor 2SK3872-01L FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 230V(Min) DSS Static Drain-Source On-Resistance R = 76m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒
8.10. Size:286K inchange semiconductor
2sk3870.pdf
isc N-Channel MOSFET Transistor 2SK3870 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 230V(Min) DSS Static Drain-Source On-Resistance R = 76m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS... See More ⇒
8.11. Size:286K inchange semiconductor
2sk3872-01s.pdf
isc N-Channel MOSFET Transistor 2SK3872-01S FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 230V(Min) DSS Static Drain-Source On-Resistance R = 76m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒
8.12. Size:330K inchange semiconductor
2sk3875-01.pdf
isc N-Channel MOSFET Transistor 2SK3875-01 FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒
8.13. Size:235K inchange semiconductor
2sk387.pdf
isc N-Channel MOSFET Transistor 2SK387 DESCRIPTION Drain Current I =12A@ T =25 D C Drain Source Voltage- V = 150V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed applications. such as off-line switching power supplies , UPS,AC and DC motor controls,rel... See More ⇒
8.14. Size:274K inchange semiconductor
2sk3874-01r.pdf
isc N-Channel MOSFET Transistor 2SK3874-01R FEATURES Drain Current I = 56A@ T =25 D C Drain Source Voltage V = 280V(Min) DSS Static Drain-Source On-Resistance R = 61m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒
8.15. Size:283K inchange semiconductor
2sk3873-01.pdf
isc N-Channel MOSFET Transistor 2SK3873-01 FEATURES Drain Current I = 56A@ T =25 D C Drain Source Voltage V = 280V(Min) DSS Static Drain-Source On-Resistance R = 61m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒
8.16. Size:357K inchange semiconductor
2sk3879.pdf
isc N-Channel MOSFET Transistor 2SK3879 FEATURES Drain Current I = 6.5A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 1.7 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB... See More ⇒
Detailed specifications: 2SK3757, 2SK3766, 2SK3767, 2SK3798, 2SK3799, 2SK3842, 2SK3843, 2SK3845, IRF830, 2SK3880, 2SK3940, 2SK4003, 2SK4013, 2SK4014, 2SK4017, 2SK4023, 2SK4026
Keywords - 2SK3878 MOSFET specs
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