2SK3880 PDF and Equivalents Search

 ..1. Size:245K  toshiba
 2sk3880.pdf

2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSIV) 2SK3880 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.35 (typ.) High forward transfer admittance Yfs = 5.2 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 640 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute ... See More ⇒

 ..2. Size:274K  inchange semiconductor
 2sk3880.pdf

isc N-Channel MOSFET Transistor 2SK3880 FEATURES Drain Current I = 6.5A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 1.7 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB... See More ⇒

 8.1. Size:280K  toshiba
 2sk388.pdf

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com ... See More ⇒

 8.2. Size:408K  fuji
 2sk3886-01mr.pdf

SPECIFICATION Power MOSFET Device Name 2SK3886-01MR Type Name MS5F5814 Spec. No. Jun-28-2004 Date NAME DATE APPROVED DRAWN Jun-28-'04 CHECKED Jun-28-'04 1 / 18 MS5F5814 CHECKED Jun-28-'04 H04-004-05 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in ... See More ⇒

 8.3. Size:416K  fuji
 2sk3882-01.pdf

SPECIFICATION Device Name Power MOSFET Type Name 2SK3882-01 Spec. No. MS5F5909 Date Sep.-16-2004 NAME DATE APPROVED Fuji Electric Device Technology Co.,Ltd. DRAWN Sep.-16-'04 CHECKED Sep.-16-'04 MS5F5909 1 / 18 Sep.-16-'04 CHECKED H04-004-05 Downloaded from Elcodis.com electronic components distributor This m aterial and the inform ation herein is the p roperty of Fuji... See More ⇒

 8.4. Size:95K  fuji
 2sk3888-01mr.pdf

2SK3888-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 ... See More ⇒

 8.5. Size:93K  fuji
 2sk3887-01.pdf

2SK3887-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C... See More ⇒

 8.6. Size:422K  fuji
 2sk3883-01.pdf

SPECIFICATION Device Name Power MOSFET Type Name 2SK3883-01 Spec. No. MS5F5910 Date Sep.-16-2004 NAME DATE APPROVED Fuji Electric Device Technology Co.,Ltd. DRAWN Sep.-16-'04 CHECKED Sep.-16-'04 MS5F5910 1 / 18 CHECKED Sep.-16-'04 H04-004-05 Downloaded from Elcodis.com electronic components distributor This m aterial and the inform ation herein is the p roperty of Fuj... See More ⇒

 8.7. Size:153K  fuji
 2sk3889-01l-s-sj.pdf

2SK3889-01L,S,SJ N-CHANNEL SILICON POWER MOSFET 200406 Outline Drawings (mm) FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings ... See More ⇒

 8.8. Size:372K  fuji
 2sk3885-01.pdf

SPECIFICATION Device Name Power MOSFET Type Name 2SK3885-01 Spec. No. MS5F5912 Date Sep.-16-2004 NAME DATE APPROVED Fuji Electric Device Technology Co.,Ltd. DRAWN Sep.-16-'04 CHECKED Sep.-16-'04 MS5F5912 1 / 18 Sep.-16-'04 CHECKED H04-004-05 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither rep... See More ⇒

 8.9. Size:394K  fuji
 2sk3884-01.pdf

SPECIFICATION Device Name Power MOSFET Type Name 2SK3884-01 Spec. No. MS5F5911 Date Sep.-16-2004 NAME DATE APPROVED Fuji Electric Device Technology Co.,Ltd. DRAWN Sep.-16-'04 CHECKED Sep.-16-'04 MS5F5911 1 / 18 Sep.-16-'04 CHECKED H04-004-05 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither rep... See More ⇒

 8.10. Size:331K  inchange semiconductor
 2sk3886-01mr.pdf

isc N-Channel MOSFET Transistor 2SK3886-01MR FEATURES Drain Current I = 67A@ T =25 D C Drain Source Voltage V = 120V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.... See More ⇒

 8.11. Size:330K  inchange semiconductor
 2sk3882-01.pdf

isc N-Channel MOSFET Transistor 2SK3882-01 FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 16m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒

 8.12. Size:289K  inchange semiconductor
 2sk3887-01.pdf

isc N-Channel MOSFET Transistor 2SK3887-01 FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒

 8.13. Size:357K  inchange semiconductor
 2sk3889s.pdf

isc N-Channel MOSFET Transistor 2SK3889S FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A... See More ⇒

 8.14. Size:283K  inchange semiconductor
 2sk3889l.pdf

isc N-Channel MOSFET Transistor 2SK3889L FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A... See More ⇒