BUK104-50SP MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK104-50SP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Id|ⓘ - Maximum Drain Current: 7.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT26301
BUK104-50SP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK104-50SP Datasheet (PDF)
buk104-50s.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK104-50L/S Logic level TOPFET BUK104-50LP/SP DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 15 Apurpose switch fo
buk104-50l-s 50lp-sp 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK104-50L/S Logic level TOPFET BUK104-50LP/SP DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 15 Apurpose switch fo
buk108-50dl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK108-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 Vmount envelope, intended as a ID Continuous drain current 13.5 Ageneral purpose switch for
buk101-50dl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK101-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 26 Apurpose switch for automotive PD T
buk107-50dl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK107-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic overload protected logic SYMBOL PARAMETER MAX. UNITlevel power MOSFET in a surfacemount plastic envelope, intended as VDS Continuous drain source voltage 50 Va general purpose switch forautomotive systems and other ID Continuous drain current
buk102-50gl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK102-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 45 Apurpose switch for automotive PD T
buk107 50ds hg 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBUK107-50DSPowerMOS transistorLogic level TOPFETMarch 1997Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC13aPhilips Semiconductors Product specificationPowerMOS transistorBUK107-50DSLogic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic overload protected logic SYMBOL PARAMETER MAX.
buk100-50dl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK100-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 13.5 Apurpose switch for automotive PD
buk108-50gs 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK108-50GS TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected power MOSFETin a 3 pin plastic surface mount VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 15 Apurpose switch for automotive PD Total power
buk109-50gs 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK109-50GS TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected power MOSFETin a 3 pin plastic surface mount VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 29 Apurpose switch for automotive PD Total power
buk102-50gs 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK102-50GS TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected power MOSFETin a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 Vas a general purpose switch for ID Continuous drain current 50 Aautomotive systems and other PD Total p
buk107-50ds 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK107-50DS Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic overload protected logic SYMBOL PARAMETER MAX. UNITlevel power MOSFET in a surfacemount plastic envelope, intended as VDS Continuous drain source voltage 50 Va general purpose switch forautomotive systems and other ID Continuous drain current
buk109-50dl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK109-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 Vmount envelope, intended as a ID Continuous drain current 26 Ageneral purpose switch for P
buk108-50gl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK108-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 Vmount envelope, intended as a ID Continuous drain current 13.5 Ageneral purpose switch for
buk107-50gl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK107-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic overload protected logic SYMBOL PARAMETER MAX. UNITlevel power MOSFET in a surfacemount plastic envelope, intended as VDS Continuous drain source voltage 50 Va general purpose switch forautomotive systems and other ID Continuous drain current
buk107 50dl hg 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBUK107-50DLPowerMOS transistorLogic level TOPFETMarch 1997Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC13aPhilips Semiconductors Product specificationPowerMOS transistorBUK107-50DLLogic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic overload protected logic SYMBOL PARAMETER MAX.
buk101-50gs.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK101-50GS TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected power MOSFETin a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 Vas a general purpose switch for ID Continuous drain current 29 Aautomotive systems and other PD Total p
buk109-50gl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK109-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 Vmount envelope, intended as a ID Continuous drain current 26 Ageneral purpose switch for P
buk102-50dl 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK102-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 45 Apurpose switch for automotive PD T
buk106-50l-s 50lp-sp 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK106-50L/S Logic level TOPFET BUK106-50LP/SP DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 50 Apurpose switch fo
buk101-50gl.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK101-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 26 Apurpose switch for automotive PD T
buk100-50gl.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK100-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 13.5 Apurpose switch for automotive PD
buk100-50gs 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK100-50GS TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected power MOSFETin a 3 pin plastic envelope, intended VDS Continuous drain source voltage 50 Vas a general purpose switch for ID Continuous drain current 15 Aautomotive systems and other PD Total p
Datasheet: BUK101-50DL , BUK101-50GL , BUK101-50GS , BUK102-50DL , BUK102-50GL , BUK102-50GS , BUK104-50L , BUK104-50LP , EMB04N03H , BUK106-50L , BUK106-50LP , BUK106-50S , BUK106-50SP , BUK108-50GS , BUK109-50DL , BUK109-50GL , BUK109-50GS .
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