2SK4207 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK4207
Marking Code: K4207
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 13 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 45 nC
Rise Time (tr): 53 nS
Drain-Source Capacitance (Cd): 300 pF
Maximum Drain-Source On-State Resistance (Rds): 0.95 Ohm
Package: SC65 TO3P
2SK4207 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK4207 Datasheet (PDF)
2sk4207.pdf
2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIV) 2SK4207 Swiching Regulator Applications Unit: mm3.20.2 15.9max. Low drain-source ON-resistance: RDS (ON) = 0.78 (typ.) High forward transfer admittance:|Yfs| = 11 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID
2sk4207.pdf
iscN-Channel MOSFET Transistor 2SK4207FEATURESLow drain-source on-resistance:RDS(ON) = 0.95 (MAX)Enhancement mode:Vth = 2 to 4 V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
2sk4204ls.pdf
2SK4204LSOrdering number : ENA1290SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4204LSApplicationsFeatures 4V drive. Avalanche resistance guarantee.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 45 VGate-to-Source Voltage VGSS 20 VDrain Cur
2sk4203ls.pdf
2SK4203LSOrdering number : ENA1289SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4203LSApplicationsFeatures 4V drive. Avalanche resistance guarantee.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 45 VGate-to-Source Voltage VGSS 20 VDrain Cur
2sk4209.pdf
2SK4209Ordering number : ENA1516SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4209ApplicationsFeatures Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitD
2sk4200ls.pdf
2SK4200LSOrdering number : ENA1333SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4200LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications
2sk4202-s19-ay.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk4201-s19-ay.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk4201.pdf
isc N-Channel MOSFET Transistor 2SK4201FEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk4204ls.pdf
isc N-Channel MOSFET Transistor 2SK4204LSFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 45V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk4203ls.pdf
isc N-Channel MOSFET Transistor 2SK4203LSFEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 45V(Min)DSSStatic Drain-Source On-Resistance: R = 34m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk4202.pdf
isc N-Channel MOSFET Transistor 2SK4202FEATURESDrain Current : I = 84A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk4200ls.pdf
isc N-Channel MOSFET Transistor 2SK4200LSFEATURESDrain Current : I = 4.0A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 2.73(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
