HN1K04FU Specs and Replacement

Type Designator: HN1K04FU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.05 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 5.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm

Package: SOT363 SC88 US6

HN1K04FU substitution

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HN1K04FU datasheet

 ..1. Size:160K  toshiba
hn1k04fu.pdf pdf_icon

HN1K04FU

HN1K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K04FU High Speed Switching Applications Unit mm Analog Switch Applications High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. Vth = 0.8 to 2.5 V Switching speed is fast. Suitable for high-density mounting because of... See More ⇒

 9.1. Size:161K  toshiba
hn1k06fu.pdf pdf_icon

HN1K04FU

HN1K06FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K06FU High Speed Switching Applications Unit mm Analog Switch Applications High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. Vth = 0.5 to 1.5 V Switching speed is fast. Suitable for high-density mounting because of... See More ⇒

 9.2. Size:296K  toshiba
hn1k03fu.pdf pdf_icon

HN1K04FU

HN1K03FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K03FU Unit in mm High Speed Switching Applications Analog Switch Applications Hign input impedance Low gate threshold voltage V = 0.5V 1.5V th Excellent switching times t = 0.16 s (typ.) on t = 0.15 s (typ.) off Small package Enhancement-mode Absolute Maximum Ratings (Ta = 25 C) (... See More ⇒

 9.3. Size:302K  toshiba
hn1k02fu.pdf pdf_icon

HN1K04FU

HN1K02FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K02FU High Speed Switching Applications Unit in mm Analog Switch Applications 2.5 V gate drive. Low threshold voltage V = 0.5V 1.5V th High speed Enhancement-mode Small package Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Drain-Source voltage VD... See More ⇒

Detailed specifications: 2SK4026, 2SK4033, 2SK4034, 2SK4115, 2SK4207, HN1J02FU, HN1K02FU, HN1K03FU, IRF1404, HN1K05FU, HN1K06FU, HN1L02FU, HN1L03FU, HN4K03JU, SSM3J01F, SSM3J01T, SSM3J02F

Keywords - HN1K04FU MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.