All MOSFET. HN1K04FU Datasheet

 

HN1K04FU MOSFET. Datasheet pdf. Equivalent


   Type Designator: HN1K04FU
   Marking Code: KH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 0.05 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 5.7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
   Package: SOT363 SC88 US6

 HN1K04FU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HN1K04FU Datasheet (PDF)

 ..1. Size:160K  toshiba
 hn1k04fu.pdf

HN1K04FU HN1K04FU

HN1K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K04FU High Speed Switching Applications Unit: mmAnalog Switch Applications High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.8 to 2.5 V Switching speed is fast. Suitable for high-density mounting because of

 9.1. Size:161K  toshiba
 hn1k06fu.pdf

HN1K04FU HN1K04FU

HN1K06FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K06FU High Speed Switching Applications Unit: mmAnalog Switch Applications High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.5 to 1.5 V Switching speed is fast. Suitable for high-density mounting because of

 9.2. Size:296K  toshiba
 hn1k03fu.pdf

HN1K04FU HN1K04FU

HN1K03FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K03FU Unit in mmHigh Speed Switching Applications Analog Switch Applications Hign input impedance Low gate threshold voltage : V = 0.5V~1.5V th Excellent switching times : t = 0.16s (typ.) ont = 0.15s (typ.) off Small package Enhancement-mode Absolute Maximum Ratings (Ta = 25C) (

 9.3. Size:302K  toshiba
 hn1k02fu.pdf

HN1K04FU HN1K04FU

HN1K02FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K02FU High Speed Switching Applications Unit in mmAnalog Switch Applications 2.5 V gate drive. Low threshold voltage: V = 0.5V~1.5V th High speed Enhancement-mode Small package Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating UnitDrain-Source voltage VD

 9.4. Size:159K  toshiba
 hn1k05fu.pdf

HN1K04FU HN1K04FU

HN1K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K05FU For Portable Devices Unit: mm High Speed Switching Applications Interface Applications High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.5 to 1.0 V Suitable for high-density mounting because of a compact pa

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top