SSM3J02F
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM3J02F
Marking Code: DD
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1
V
|Id|ⓘ - Maximum Drain Current: 0.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 61
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5
Ohm
Package:
SOT346
SC59
SMINI
SSM3J02F
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM3J02F
Datasheet (PDF)
..1. Size:319K toshiba
ssm3j02f.pdf 
SSM3J02F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02F Power Management Switch Unit: mmHigh Speed Switching Applications Small package Low on resistance : Ron = 0.5 (max) (@VGS = -4 V) : Ron = 0.7 (max) (@VGS = -2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source
7.1. Size:184K toshiba
ssm3j02t.pdf
SSM3J02T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02T Power Management Switch Unit: mmHigh Speed Switching Applications Component package suitable for high-density mounting Small Package Low ON Resistance : Ron = 0.5 (max) (@VGS = -4 V) : Ron = 0.7 (max) (@VGS = -2.5 V) Low-voltage operation possible Absolute Maximum Ratings
8.1. Size:207K toshiba
ssm3j01t.pdf
SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch Unit: mmHigh Speed Switching Applications Small Package Low on Resistance: Ron = 0.4 (max) (@VGS = -4 V) : Ron = 0.6 (max) (@VGS = -2.5 V) Low Gate Threshold Voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source
8.2. Size:290K toshiba
ssm3j05fu.pdf
SSM3J05FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J05FU Power Management Switch High Speed Switching Applications Unit: mm Small package Low on resistance : Ron = 3.3 (max) (@VGS = -4 V) : Ron = 4.0 (max) (@VGS = -2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-sour
8.3. Size:312K toshiba
ssm3j01f.pdf
SSM3J01F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01F High Speed Switching Applications Unit: mm Small package Low on resistance : Ron = 0.4 (max) (VGS = -4 V) : Ron = 0.6 (max) (VGS = -2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDS -30 VGate-so
8.4. Size:165K toshiba
ssm3j09fu.pdf
SSM3J09FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J09FU Management Switch Unit: mmHigh Speed Switching Applications Small package Low on resistance: Ron = 2.7 (max) (@VGS = -10 V) : Ron = 4.2 (max) (@VGS = -4 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS -30 VGate-Source voltage
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