SSM3J117TU MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM3J117TU
Marking Code: JJ9
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.6 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 80 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.117 Ohm
Package: UFM
SSM3J117TU Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM3J117TU Datasheet (PDF)
ssm3j117tu.pdf
SSM3J117TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU High-Speed Switching Applications 4 V drive Unit: mm Low ON-resistance: Ron = 225 m (max) (@VGS = -4 V) 2.10.1Ron = 117 m (max) (@VGS = -10 V) 1.70.1Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit1Drainsource voltage VDS -30 V32Gatesour
ssm3j115tu.pdf
SSM3J115TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J115TU High-Speed Switching Applications Power Management Switch Applications Unit: mm2.10.1 1.5 V drive 1.70.1 Low ON-resistance: Ron = 353 m (max) (@VGS = -1.5 V) Ron = 193 m (max) (@VGS = -1.8 V) Ron = 125 m (max) (@VGS = -2.5 V) 1Ron = 98 m (max) (@VGS = -4.0 V) 3Ab
ssm3j110tu.pdf
SSM3J110TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J110TU High Speed Switching Applications 1.8V driveUnit: mm Low on-resistance: Ron = 240m (max) (@VGS = -1.8 V) Ron = 145m (max) (@VGS = -2.5 V) 2.10.1Ron = 94m (max) (@VGS = -4.0 V) 1.70.1Absolute Maximum Ratings (Ta = 25C) 1Characteristic Symbol Rating Unit32Drain-Sou
ssm3j113tu.pdf
SSM3J113TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J113TU High Speed Switching Applications 2.0V driveUnit: mm Low on-resistance: Ron = 449m (max) (@VGS = -2.0 V) 2.10.1Ron = 249m (max) (@VGS = -2.5 V) 1.70.1Ron = 169m (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25C) 1Characteristic Symbol Rating Unit32Drain-
ssm3j118tu.pdf
SSM3J118TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J118TU High-Speed Switching Applications 4 V drive Unit: mm Low ON-resistance: Ron = 480 m (max) (@VGS = -4 V) 2.10.1Ron = 240 m (max) (@VGS = -10 V) 1.70.1Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit1Drainsource voltage VDS -30 V32Gatesour
ssm3j114tu.pdf
SSM3J114TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J114TU High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.5 V drive 2.10.1 Low on-resistanceRon = 526 m (max) (@ VGS = -1.5 V) 1.70.1 Ron = 321 m (max) (@ VGS = -1.8 V) Ron = 199 m (max) (@ VGS = -2.5 V) 1Ron = 149 m (max) (@ VGS = -
ssm3j112tu.pdf
SSM3J112TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J112TU High Speed Switching Applications Unit: mm 4V drive2.10.1 Low on-resistance: Ron = 790m (max) (@VGS = -4 V) 1.70.1Ron = 390m (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta = 25C) 1Characteristic Symbol Rating Unit32Drain-Source voltage VDS -30 VGate-Source volta
ssm3j111tu.pdf
SSM3J111TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J111TU High Speed Switching Applications Unit: mm 2.5V drive 2.10.1 Low on-resistance: Ron = 480m (max) (@VGS = -4 V) 1.70.1Ron = 680m (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) 132Characteristic Symbol Rating UnitDrain-Source voltage VDS -20 VGate-Source vol
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