SSM3J16FS
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM3J16FS
Marking Code: DT
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1
V
|Id|ⓘ - Maximum Drain Current: 0.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 10
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 8
Ohm
Package:
SOT416
SC75
SSM
SSM3J16FS
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM3J16FS
Datasheet (PDF)
..1. Size:185K toshiba
ssm3j16fs.pdf 
SSM3J16FS TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM3J16FS High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on-resistance : RDS(ON) = 8 (max) (@VGS = -4 V) : RDS(ON) = 12 (max) (@VGS = -2.5 V) : RDS(ON) = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol
6.1. Size:180K toshiba
ssm3j16fv.pdf
SSM3J16FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM3J16FV High Speed Switching Applications Analog Switch Applications Small package Unit: mm Low on-resistance : RDS(ON) = 8 (max) (@VGS = -4 V) : RDS(ON) = 12 (max) (@VGS = -2.5 V) : RDS(ON) = 45 (max) (@VGS = -1.5 V) 1.20.05Absolute Maximum Ratings (Ta = 25C) 0.80.05
6.2. Size:222K toshiba
ssm3j16fu.pdf
SSM3J16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM3J16FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on-resistance : RDS(ON) = 8 (max) (@VGS = -4 V) : RDS(ON) = 12 (max) (@VGS = -2.5 V) : RDS(ON) = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol
7.1. Size:203K toshiba
ssm3j16ct.pdf
SSM3J16CT TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM3J16CT High Speed Switching Applications Analog Switch Applications Unit: mm0.60.05 Small package 0.50.03 Low on-resistance : RDS(ON) = 8 (max) (@VGS = -4 V) : RDS(ON) = 12 (max) (@VGS = -2.5 V) : RDS(ON) = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25
7.2. Size:180K toshiba
ssm3j16te.pdf
SSM3J16TE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on-resistance : Ron = 8 (max) (@VGS = -4 V) : Ron = 12 (max) (@VGS = -2.5 V) : Ron = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-So
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